Hydrothermal Prepared Sb₂S₃,Sb₂（S,Se）₃ Thin Films And The Study Of Photovoltaic Properties

Antimony–based chalcogenides including antimony sulfide（Sb₂S₃）,antimony selenide（Sb₂Se₃）,and antimony selenosulfide（Sb₂（S,Se）₃）,are considered to be one of the most promising emerging photovoltaic materials due to their characteristics of the earth–abundant,low–toxicity,low–cost,high light absorption coefficient(α>10⁴ cm^–1),low crystal growth temperature,and the stable crystal phase.Sb₂S₃ with a direct bandgap of 1.7–1.9 e V,has the potential to be an excellent indoor photovoltaic device.And Sb₂（S,Se）₃ with a direct bandgap of 1.1–1.7 e V,has a theoretical power conversion efficiency（PCE）of over 30%.In recent years,the hydrothermal method has shown remarkable advantages in the preparation of high–efficient Sb₂X₃（X=S,Se）thin–film solar cells,obtaining a certified maximum PCE of 10%.However,there are few studies on the growth mechanism of Sb₂X₃ thin films,the indoor photovoltaic properties of Sb₂S₃ devices,the photoelectric properties,and the defects of Sb₂（S,Se）₃ thin films.Therefore,this work conducts the following research on the above issues.The growth mechanism of Sb₂S₃ thin films prepared by the hydrothermal method was studied.The competition growth mechanism of the homogeneous reaction and heterogeneous reaction in Sb₂S₃ thin films prepared by the hydrothermal method was introduced utilizing phase analysis and morphology characterization.Then,the effect of anionic additive sodium dodecyl sulfate（SDS）on the properties of Sb₂S₃ thin films was explored.The appropriate amount of SDS can regulate the growth of Sb₂S₃ thin films,and improve the quality of Sb₂S₃ thin films by enhancing heterogeneous nucleation and inhibiting homogeneous nucleation.The Sb₂S₃ thin–film solar cells with the structure of FTO/Sn O₂/Cd S/Sb₂S₃/Spiro–OMe TAD/Au after adding SDS achieved a PCE of 6.84%under standard AM1.5 illumination irradiance.And,the Sb₂S₃ thin–film solar cells obtained a PCE of 16.37%under the illumination of 1000 lux white LED（3000 K）.Sb₂（S,Se）₃ thin films were prepared by adding additional selenourea into the Sb₂S₃ precursor solution.The effects of Se content and the hydrothermal deposition time on the surface morphology,the optical absorption,and the band gap of Sb₂（S,Se）₃ thin films were studied.Sb₂（S,Se）₃ thin–film solar cells with the structure of FTO/Sn O₂/Cd S/Sb₂（S,Se）₃/Spiro–OMe TAD/Au were prepared,and a PCE of 10.74%was achieved.At the same time,the electrical properties of Sb₂（S,Se）₃ devices were analyzed by electrochemical measurements.The carrier concentration and the defects of Sb₂（S,Se）₃ thin films were numerically simulated and analyzed by Scaps–1D software.The simulation results show that the open–circuit voltage losses of Sb₂（S,Se）₃ thin–film solar cells are mainly caused by the deep–level defects.