Research Of Nonvolatile Memory Devices Based On MXene And Low-dimensional Material Stacking Structure

The popularity of computers makes today’s society in the information age.The characteristic of the information age is that a large amount of information is explosively produced every day.Therefore,how to store the high density information is the focus of numerous researchers.Typical storage devices have been on the market for decades,they have been able to meet ordinary storage needs.But the high-density information storage requirements new materials,which may challenge the physical and theoretical limits of information storage.As a hot material,MXene has attracted much attention in science and industry.It shows excellent performance when used in devices for power and energy storage.The application of MXene and low dimensional material stacking in memory is another exploration of this material in nonvolatile memory,which expands the application field of MXene.The two main contents of this thesis are as follows:（1）The first paper deals with the fabrication and working mechanism of nonvolatile resistive memory devices using MoSe₂（2D）/MXene as the storage medium.The MXene nanosheets obtained by MAX etching and the MoSe₂（2D）nanosheets prepared by atmospheric pressure chemical vapor deposition were stacked,and the memory based on MoSe₂（2D）/MXene as the storage medium was successfully fabricated.Without changing the process of synthesis of MoSe₂ material,the experimental data were recorded after the concentration gradient of MXene solution was changed alternately.Based on the experimental data of Ag/MoSe₂（2D）/MXene/ITO nonvolatile resistive memory,we find that the switch threshold voltage of the nonvolatile memory is≤1 V and the storage range can reach 10².The hold time for one state can reach as long as 1.2×10⁴ seconds,there is no obvious decay trend,and the memory performance is attenuated only after 100 times of read and write.At the end of this experiment,we also found that the device shows strong response to light.At the same time,the reasons for this phenomenon are also described.（2）Based on the first experimental investigation,the second work is to keep MXene and replace MoSe₂（2D）with the zero-dimensional material Cs Pb Br₃（QD）quantum dots and construct the second device based on Cs Pb Br₃（QD）/MXene storage medium.Based on the experimental results of the Ag/Cs Pb Br₃（QD）/MXene/ITO nonvolatile resistive memory,we analyze that the structure of Cs Pb Br₃ quantum dots compared to the two-dimensional MoSe₂material in the first experiment balances the gap between the stacking of MXene and MoSe₂materials in the first device better than that of MoSe₂ nanosheets.The presence of Cs Pb Br₃quantum dots not only improves the stability and performance of the device,but also ensures that the storage range can still reach 10².