Monolayer Semiconductor Graphene And MoS₂ Electron Band Structure Adjustment And Luminescence Characteristics

Over the past decade,we have witnessed tremendous advances in electronic technology related to graphene and molybdenum disulfide.Because of their excellent properties,graphene and molybdenum disulfide have great potential in the future.However,the development of monolayer graphene in the semiconductor field is greatly limited due to the lack of inherent band gap and its semi-metallic properties,and the fact that monolayer molybdenum disulfide is a direct band gap semiconductor,but the electronic band structure of monolayer molybdenum disulfide cannot be adjusted.In this paper,a new electron beam excited fluorination technology is used to fluorinate monolayer graphene and monolayer molybdenum disulfide to obtain C₄F and molybdenum disulfide fluoride materials.Through a series of characterization of these two materials,such as Raman spectroscopy,XPS spectra,AFM images,SEM images and electrical characterization,it is confirmed that electron beam excited fluorination technology can achieve the function of regulating the electron band structure of single layer graphene and single layer molybdenum disulfide,and it is confirmed that electron beam excited fluorination technology is a locally controllable technology.According to the experimental data,the C₄F material obtained by electron beam excited fluorination technology can emit violet light at 380 nm,which is a direct band gap semiconductor material with a band gap of about 3.26 eV.The molybdenum fluoride obtained by electron excited fluorination successfully increases the band gap of molybdenum disulfide and causes the photoluminescence spectrum of molybdenum disulfide to blue shift.This proves that electron beam excited fluorination technology can open the band gap of single layer graphene and increase the band gap of single layer molybdenum disulfide,thus realizing the function of regulating the electronic band structure of these two materials.At the same time,this technology is also a very reliable technology.Firstly,electron beam excited fluorination technology can achieve locally controlled fluorination,which has a crucial impact on the future application of this technology.Secondly,this technology can control the degree of fluorination by controlling the electron dose of the electron beam.Some intrinsic properties of the material can be effectively preserved.Therefore,this paper provides a new technology,through the treatment of this technology,the original semi-metallic graphene into a direct band gap semiconductor material,this technology successfully opens the door of the application of graphene in the semiconductor field,and the production of fluorine fossil ink materials can be photoluminescence,which also lays a foundation for the application of graphene in the field of optoelectronics.At the same time,the single layer of molybdenum disulfide treated by electron beam excited fluorination technology also realizes the function of regulating the electron band structure,and successfully changes the photoluminescence spectrum of molybdenum disulfide.This technology enables molybdenum disulfide to have a broader application space in the photoelectric application direction,especially in the field of molybdenum disulfide photodetectors.In conclusion,electron beam excited fluorination has successfully realized the function of regulating the electron band structure of monolellers graphene and monolellers molybdenum disulfide,and has also influenced the photoluminescence of these two materials.In conclusion,electron beam excited fluorination is a very significant technology.