Study On Prepartion And Growth Of Hafnium Nitride Thin Films On Silicon Substrate By Magnetron Sputtering

The transition refractory metal hafnium nitride（Hf N）,which has good electrical conductivity,corrosion resistance,high hardness,melting point,and less thermal and lattice mismatch with Si and Ga N materials,Therefore,Hf N can be used as a buffer layer material for heteroepitaxial Ga N on Si substrate and a conductive interdiffusion barrier material for the fabrication of N-type ohmic contact metal electrode structure in Si-based Ga N process devices.However,previous studies on Hf N mainly focused on its application as wear-resistant and hard coating,and few studies on the preparation and growth of Hf N thin film.In view of the magnetron sputtering method is a widely used film preparation and growth technology in the semiconductor industry,this paper focuses on the preparation and growth of Hf N thin film by magnetron sputtering on Si substrate.It lays the theoretical and experimental foundation for the high quality growth and application of Hf N thin films on Si substrate.In this paper,Hf N thin films were grown on Si substrates by magnetron sputtering,and the effects of different process parameters such as growth time,N₂ratio of reactant gas,growth temperature and sputtering power on the crystallization quality of Hf N thin films under different sputtering methods were studied.The specific research contents and achievements are as follows:1.Hf N thin films were grown on Si substrate by RF reactive magnetron sputtering.The effects of growth temperature,growth time,N₂ratio of reactant gas and sputtering power on the crystallization quality of Hf N thin films were studied.The results show that the crystalline quality of the grown Hf N films prepared on Si substrate using RF reactive magnetron sputtering was poor,and the Hf N films with meritocratic orientation along the（111）plane were not obtained.Despite repeated optimization of the experimental parameters,finally only Hf N films with disordered growth of orientation were obtained at the process parameters of 550°C growth temperature,1:10 reaction gas N₂ratio,60 min growth time,and 150 W sputtering power.2.Hf N thin films were grown on Si substrate by DC reactive magnetron sputtering.The effects of growth temperature,growth time,N₂ratio of reactant gas on the crystallization quality of Hf N thin films were studied.The results show that the high-quality growth of Hf N（111）plane is realized under the technological parameters of600℃growth temperature,100 W sputtering power,1:10 ratio of reaction gas N₂and60 min growth time.