Study On The Resistance Switching Characteristics Of Metal Oxide Composite Structure Films

With the rapid development of semiconductor processes,the size of the devices inside the equipment is getting smaller and the degree of integration is getting higher and higher.Because of its low power consumption,small size,simple structure,fast read and write speed,high storage density and compatibility with COMS technology,nonvolatile resistive memory has become one of the next generation of mainstream storage devices.The selection and preparation of resistive materials will directly affect the resistive performance of devices.Metal oxides are not only widely used in microelectronics and optoelectronics,but also have been proved to have excellent resistive switching behavior.In the regulation of device resistance,the methods of intercalation,doping,electrode,temperature and preparation method are generally used to regulate the resistance characteristics of resistance memory.In this paper,the effect of metal oxide ZnO as device intercalation on the performance of CsPbBr3-based resistive memory is studied;The performance improvement of SnO₂ based resistive memory after introducing Mn and Cu doping;The influence of TiO₂-based resistive memory prepared by different methods and non-metallic element N doping on device performance.The specific research contents are as follows:1.A resistive memory with Au/CsPbBr3/FTO structure was prepared,and ZnO intercalation was introduced to explore the influence of different intercalation insertion positions on device performance.It is found that the introduction of ZnO can reduce the gaps between the films and thus reduce the leakage current.In addition,when the ZnO interlayer is located on the top of the resistive material layer,it can also play the role of protective layer of the device,and extend the service life of the device in the air environment at room temperature.2.Au/SnO₂/FTO,Au/Mn:SnO₂/FTO and Au/Cu:SnO₂/FTO varistors were prepared by the sol gel method,and their performances were characterized to explore the influence of the introduction of metal elements Mn and Cu on the varistors.The experimental results showed that the introduction of these two doped elements did not change the original grain structure of SnO₂,but promoted the grain refinement.The resistance state switching process of the device after Mn doping and Cu doping changes obviously,but there are differences in the switching window and other properties of the device due to different doping.3.Au/TiO₂/FTO structure rheostatic devices were prepared by sol gel method and hydrothermal method,and the rheostatic properties of TiO₂ nano films were optimized by doping nonmetallic element N in the hydrothermal method.The experimental results show that the morphology of TiO₂ prepared by different methods is different.Compared with the sol gel method,the resistance switching voltage of TiO₂ nanowire films prepared by hydrothermal method is lower.A conductive filament model diagram based on oxygen vacancy and oxygen ion correlation is proposed to further explain the reason why N doping improves the device performance.