| Graphene,as one important candidate for the new-generation of electronic materials and devices,has been leading the research trend in the field of two-dimensional materials since its inception in 2004 due to its unique electrical,mechanical and optical properties.Chemical vapor deposition(CVD)can obtain large-area graphene with high light transmittance and low resistance at relatively low cost.It has become the mainstream technology for growth of graphene.However,the application of graphene in various fields often relies on substrates such as semiconductors and flexible plastic substrates,Therefore,in order to realize the specific application of CVD grown graphene,the transfer step is also needed.Different transfer technologies will affect the cleanliness,integrity and uniformity of graphene film to different degrees,which indirectly affects the performance of graphene substrate.In this work,the possible damage and contamination caused by the interposer layer and solvent used in the wet transfer process was studied.Consequently we proposed a novel anthracene assisted transfer process of graphene which can avoid the contamination caused by C=O bonds.The main workincludes:(1)The problems of commonly used PMMA-assisted graphene transfer and acetone immersion were studied.Additional peaks corresponding to residual polymers were observed in Raman spectra.Therefore a transfer process not involving C=O bonds is needed.(2)A novel method of graphene wet transfer using anthracene as the support layer and ethanol as the cleaning agent was proposed.The Anthracene molecule of PAHS not only does not contain C=O bonds,but also has a moderate melting point and readily soluble in organic solvents.Our experiments demonstrate that the anthracene layer can provide sufficient support strength for graphene and succeed in assisting the transfer CVD grown graphene to SiO2/Si substrates.In the Raman spectrum,no additional peaks except for the graphene characteristic peaks were observed. |
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