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Study On Interface And Surface Defects Of SnO2-Based Photocatalysts

Posted on:2023-05-30Degree:MasterType:Thesis
Country:ChinaCandidate:W W RenFull Text:PDF
GTID:2531306848460604Subject:Materials science
Abstract/Summary:PDF Full Text Request
The n-type wide-bandgap semiconductor SnO2(Eg=3.6 eV)is a promising oxide photocatalyst.However,its narrow light absorption range and serious recombination of photogenerated electrons and holes greatly hinder its application in the field of photocatalysis.In this work,SnO2/SnS2heterojunction was constructed by in situ method,and another self-doped SnO2-xphotocatalyst with rich surface oxygen vacancies was prepared under the guide of defect engineering.The improvement mechanism of SnO2/SnS2heterojunction and SnO2-xwith surface oxygen vacancies on SnO2photocatalytic performance has been investigated.The main contents are as follows:1.Visible-light-driven 0D/2D SnO2/SnS2heterojunction photocatalysts with good cycling stability were prepared in situ by a two-step hydrothermal method.When the molar ratio of SnO2to SnS2is 1:2,the SnO2/SnS21:2 has the best photocatalytic performance.The degradation efficiency of MO by SnO2/SnS21:2 under visible light irradiation reaches 99.1%in 70 min,and the apparent rate constant is 10.9 times and 5.0times higher than those by SnS2and physical mixed samples,respectively.The efficiency of reducing Cr(VI)in 40 min is as high as 98.4%,and the apparent rate constant is 66.7times,7.6 times and 4.5 times higher than those by SnO2,SnS2and physical mixed samples,respectively.2.Both the experimental and theoretical calculation results have confirmed that the interfacial charge transfer of SnO2/SnS2is consistent with the S-scheme heterojunction.Under the action of built-in electric field,energy band bending,and Coulomb attraction,the photogenerated electrons on SnS2CB and the holes on SnO2VB with strong redox ability are preserved,which can provide a stronger driving force for photocatalytic degradation of MO and reduction of Cr(VI).3.An excellent SnO2-xphotocatalyst integrating adsorption and photocatalytic reaction was successfully constructed by introducing oxygen vacancies into SnO2by partially oxidizing Sn2+to Sn4+via low-temperature hydrothermal method.Under simulated sunlight,the degradation efficiency of MO by SnO2-x(90)reached 97.8%after 6min,and the apparent rate constant is 377.2 times and 281.3 times higher than those by SnO2and H2O2-SnO2-x,respectively.The reduction efficiency of Cr(VI)reached 98.3%after 4 min,and the apparent rate constant is 54.0 times and 148.4 times than those by SnO2and H2O2-SnO2-x,respectively.4.Oxygen vacancies in single SnO2-xcan reduce the band gap to 3.16 eV and increase the reducing power of conduction band electrons.Surface oxygen vacancies can trap photogenerated electrons and prolong their lifetimes,and also serve as active sites for the adsorption and photocatalytic reactions of MO and Cr(VI),facilitating the mass transfer process that occurs at the surface.In addition,the possible relationship between oxygen vacancy content and carrier concentration is also discussed.
Keywords/Search Tags:SnO2, photocatalysis, SnO2/SnS2, S-scheme heterojunction, surface oxygen vacancy
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