| Transparent conductive oxide(TCO)films have important applications in many areas.However,TCOs are usually fabricated using vacuum and high-temperature methods,which makes it difficult to use them for,e.g.,low-cost flexible devices.In this paper,facile low-temperature sol-gel method is described that can be used to fabricate high-quality TCO films.In this paper,the oxide material first uses ITO to explore the effect of annealing time on the phase,morphology and photoelectric properties of the film.Then,the low-temperature light wave process was further developed and ITO pattern was successfully prepared.Finally,the wire rod coating method was used instead of the spin coating method to realize the low-cost large area preparation of ITO film.This study uses lightwave(LW)irradiation(at～280 ℃)with fluorine-doped-tinoxide(ITO)as typical example.Both structure and key properties of ITO films are investigated for different LW irradiation conditions.ITO can be formed via LW irradiation after a period as short as 5 min.Furthermore,it is found that LW irradiation can promote the formation of M-O framework,effectively remove C1 impurities,and it facilitates the elimination of hydroxyl oxygen defects-even at temperatures as low as～280 ℃.The optimal ITO films show excellent electronic properties,including low sheet-resistance(14.5 Ω·sq-1)and high conductivity(1.7×103 S·cm-1).Moreover,ITO films also show high(visible light)transmittance(above 87%).Overall,ITO films in this study have a figure of merit(FOM)of 1.72×10-2 Ω-1,which is comparable to(or higher than)those of previous ITO films that were produced using conventional vacuum and high-temperature methods.This work further develops the lowtemperature light-wave process,which proves the wide application of this technology,and is of great significance for the commercialization of low-cost low-temperature TCO thin films.Then,we explore the application of ITO film prepared by low temperature light wave in order to overcome the problems of high cost,high toxicity and complicated process of photolithograph in semiconductor device manufacturing.BzAc is added into the precursor solution of ITO thin film as a photosensitive compound,so that the precursor solution itself can play a similar role as photoresist,that is,ITO film can form photosensitive pattern without photolithograph.The effect of BzAc was confirmed by measuring the absorbance of ITO precursor film added with BzAc in UV band under different UV irradiation time and the optimal UV irradiation time was determined.We also explored the absorbance of ITO precursor films with different BzAc content in UV band and the photoelectric properties of ITO thin films after annealing.Also,we determined the best BzAc content.Finally,when BzAc/In value is 0.5,ITO film has lower sheet resistance(30.6 Ω/sq),higher UV absorption and transmittance in visible region(>90%),which is a relatively appropriate proportion.Finally,based on the preparation of high-performance ITO film by low temperature light wave,this paper uses wire rod coating method to replace the previous spin coating method,and realizes the low-cost and large-area preparation of highperformance ITO film.The influence of the concentration of indium chloride in the precursor solution on the surface morphology and optoelectronic performance of the films was discussed in detail.The results show that the change of the concentration of indium chloride has a significant effect on the crystallinity,surface roughness,thickness and electron distribution of oxygen components of the films.Finally,ITO film shows the best performance when the concentration of indium chloride in the precursor solution is 0.5 M(45.2 Ω/sq of sheet resistance,4.06×1019 cm-3 of carrier density,8.87 cm2/Vs of carrier mobility,and the transmittance at 550 nm is over 80%.The FOM value is 2.37×10-3 Ω-1).This work is of great significance for the preparation of high performance TCO with low cost and large area. |
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