Research On Luminescence And Regulation Of Rare Earth Doped Bi₃O₄Cl Layered Semiconductors Based On Ferroelectric Photovoltaic Effec

Environmental sensitivity transition of Ln3+dopants offer the scientific interest for understanding and exploring the special anisotropic property and photophysical property of layered semiconductor.Here,we reported the probing investigation of Bi3O4Cl semiconducting microcrystals by the ultrasensitive spectroscopic fingerprints of Eu3+ion dopants.It was observed that the branch ratio of certain sensitive transitions and the radiative rates of Eu3+ion were changed significantly when incident light varies from intraband to fundamental-absorption band.The comparative experiments suggest that under irradiation,the transition behavior of Eu3+ions can be modified sensitively by the extra polarization field and the separation of carriers respectively,which are induced by the excellent photoferroelectrics of Bi3O4Cl layered crystals.These findings provide insights into the photophysical property of layered semiconductors and their interaction with Ln3+dopants and highlight it possible application in photonic and photoelectric devices.Due to the highly anisotropic crystal structures and unique photo-physical property,the transition of rare earth(Re)doped in the two dimensional(2D)semiconductors might great diverse from that doped in the traditional ones.Here,we reported anti-stocks and stocks photoluminescence(PL)of Er3+doped Bi3O4Cl layered semiconductors via solid exfoliation.Doping Er3+ions and subsequently Li+was found to exfoliate the Bi3O4Cl polycrystals into nanosheets by conversional solid reaction for the first time.The two-dimensional confinement of electrons upon exfoliation leads to enhancing emission intensity and radiation rate for the Er3+ion except for that by band to band excitation.Comprehensive analysis indicate that the decrease in thickness and resultant IEF enhancement of Bi3O4Cl nanosheets improve the excitation of electrons and inhabit recombining electron-hole pair not only for the band to band transition but also for the Er3+ions.Our current work is expected to offer new insight into special transition mechanisms of RE ions in 2D semiconductor.Anomalous Photoluminescence phenomena of rare earth ion generally can enrich and deepen the understanding of the photophysical behaviors of RE ion triggered by material structure.