Study Of Memristive Effect Of Planar Structured Memristors And Simulation Of Artificial Synaptic Function

As a nanoscale electronic device,memristors can achieve smaller size,lower power consumption and higher efficiency.The new computer architecture based on memristors is widely considered as an alternative to the von Neumann architecture and has great potential to meet the challenges in the era of neural networks and big data.In the field of new materials,two-dimensional ferroelectric materials have shown great potential for applications in functional and structural materials due to their atomic thickness and excellent electrical,optical,thermal,and mechanical properties not possessed by conventional materials.Although many ferroelectric materials are predicted by theoretical calculations,the number of experimentally confirmed ferroelectric materials is still limited.In this paper,a novel two-dimensional ferroelectric material,WO₂Cl₂,is presented.The structure and in-plane polarized ferroelectricity of WO₂Cl₂ were determined from the Raman spectra and PFM test results of the prepared WO₂Cl₂ bulk material.The experimentally prepared planar double-ended devices based on few-layer WO₂Cl₂ flakes were studied for the modulation of electric and optical fields,respectively.The main research of this paper is as follows:（1）:Two-dimensional material devices were prepared and transport measurements were performed to study a planar structured double-ended ferroelectric memristor with 2μm electrode spacing constructed using WO₂Cl₂ flakes.Hysteresis of the current and a switching ratio exceeding10⁴ are observed in the device I-V curves,and the ferroelectric switching mechanism is described.Over 600 cycles of testing demonstrate the stability of the device.（2）:The application of planar double-ended WO₂Cl₂ memristors in artificial synapses is explored,and the devices exhibit long-term potentiation and long-term depression characteristics of artificial synapses.The results can be applied to advanced functional memories and complex synaptic simulations.（3）:The optical field modulation of WO₂Cl₂ double-ended devices was studied.The light-receiving area of WO₂Cl₂ is increased by preparing the electrode spacing of 8μm.The I-V curves of the WO₂Cl₂ double-ended devices were tested under two environmental conditions,dark and light,respectively,and the results showed that the switching ratio of the device under light/dark conditions reached 10⁴.This provides another degree of freedom for the tuning of ferroelectric WO₂Cl₂memristors and shows the great potential of this novel two-dimensional ferroelectric material for applications.