Optical waveguides are the basic structure of optoelectronic devices,possessing powerful information processing capabilities,efficient transmission rates,and broad application prospects.The performance of the waveguides will affect the quality of the entire optical communication system.Therefore,preparing high-quality and high-performance optical waveguides has become one of the important goals in the field of integrated optics.The ion implantation is the material surface modification method selected in this paper.It is based on the Monte Karlo calculation method and uses the SRIM software(The Stopping and Range of Ions in Matter)to simulate and calculate the range distribution,electron energy loss distribution,and nuclear energy loss distribution of ions.Analyze the effective refractive index,near-field intensity distribution,refractive index distribution of materials using prism coupling and end face coupling devices.For the exploration of waveguide performance,the reflection calculation method(RCM)and finite difference beam propagation method(FD-BPM)are used to reconstruct and simulate the optical structure of the waveguide.By observing the two-dimensional(2D)and three-dimensional(3D)near-field light intensity distribution,judge whether the waveguide can limit the transmission of light.Micro-fluorescence spectroscopy technology is used to study the effect of ion implantation on the fluorescence characteristics of crystals,monitor the fluorescence characteristics at different depths of ion implantation,and analyze the changes in fluorescence characteristics under different parameters.This paper mainly explores the optical properties of optical waveguides prepared by H ion and O ion implantation in erbium-doped tellurite glass and He ion implantation in potassium titanate phosphate crystal(KTP),as follows:One of the selected materials for research is tellurite glass.The energy of 460 ke V and 3000ke V at a dose of 5.6×1016 ions/cm2 and 1.0×1015 ions/cm2 of H and O ions were implanted into Er doped tellurite glass(60Te O2-30WO3-10La2O3-1Er2O3),respectively.Finally,high quality"barrier"type planar optical waveguides were prepared in both samples successfully.The quality of the waveguide prepared by H ion implantation is significantly better than that of the waveguide prepared by O ion implantation.The transmission loss generated by O ion implantation is large,leading to significant leakage loss.The waveguide cannot limit the transmission of light to the maximum extent.However,the fluorescence characteristics of erbium-doped tellurite glass have been well preserved in the waveguide region after ion implantation.To some extent,it can be reasonably believed that surface modification of Er-doped tellurite glass by ion implantation is more suitable when the photoluminescence characteristics need to be maintained.The second selected material for the research content is potassium titanate phosphate crystal(KTP).The energy of 2.4 Me V and the dose of 2.2×1016 ions/cm2 of hydrogen ions were implanted into z-cut KTP crystals to fabricate a"barrier"type optical waveguide at first.The annealing experiments at temperatures of 200°C,300°C,400°C,and 500°C were conducted after that step by step.The guided modes and corresponding effective refractive index of samples under various annealing conditions at the waveguide of 633nm and 1539nm were measured using a prism coupling device.The near-field intensity distribution of zero order mode light were measured at the wavelength of 633nm and TM(transient magnetic)polarization.The end face coupling results indicate that when the wavelength is 633 nm,the optical waveguide has a certain limiting effect on both TE(transient electric)and TM polarization states of light,but the optical limiting effect of TM polarization state is weak.The KTP crystal was characterized by Raman spectroscopy with a laser wavelength of 532nm.The results showed that the peak intensity was highest at 269cm-1,followed by 695cm-1.For Raman peaks in the range of 600cm-1 to 850 cm-1,the intensity of the Raman peak at the damage peak is significantly weaker than that of the substrate,but for the near surface region and the implantation end,the intensity of the two is similar.This thesis uses ion implantation technology to modify the surface of erbium-doped tellurite glass and KTP crystal,forming optical waveguide structures in the near surface region of both materials,and exploring the optical characteristics of the waveguide.After ion implantation into erbium doped tellurite glass,its fluorescence characteristics are well preserved,providing an alternative solution for the preparation of optical waveguides based on this material.The damage distribution and annealing behavior of KTP crystals implanted with helium ions were studied,and optimized annealing conditions were obtained.The research in this paper enriches the experimental results of ion implantation in the surface modification of erbium doped tellurite glass and KTP crystal,providing reference data for the application of these two materials in the field of integrated optics. |