Research And Design Of Silicon-Based RF Power Amplifier

With the rapid development of wireless communication technology and radar detection technology,people have put forward higher requirements for high-performance wireless communication systems and radar systems.At the same time,with the development of semiconductor technology,circuits are gradually developing towards miniaturization and integration.It is widely used in various fields.As the core module of wireless communication systems and radar systems,radio frequency transceivers are gradually developing from the board level to the chip level with the portability of communication terminals and the miniaturization of radars.The power amplifier is the most important module in the transmitter,and it undertakes the main signal amplification function.With the chipization of the RF transmitter,the power amplifier also adopts the chip design.The new generation of III-V semiconductor process has gained advantages in the disputes of semiconductor process with its higher performance level,but its high manufacturing cost and low integration are difficult to ignore.As the most commonly used semiconductor process,the silicon-based CMOS process has attracted more attention due to its relatively low cost,higher design freedom,more mature manufacturing technology and more accurate simulation models.Therefore,in the design of future RF power amplifiers,silicon-based technology is still a mainstream design choice.The main research work of this thesis is as follows:1.Research on amplifier based on on-chip integrated transformer.Through the modeling and analysis of the integrated transformer on the silicon substrate,a simulation and design method of the integrated transformer on the chip is established,which effectively reduces the chip area occupied by the amplifier matching.At the same time,the influence of the traditional neutralizing capacitor technology on the stability of the amplifier is analyzed.By using the design method of MOSCAP,the situation that the stability of the amplifier is deteriorated due to process deviation is avoided.After electromagnetic simulation,the results show that the amplifier has better performance.2.Research on power amplifier based on on-chip integrated T-type combined network.By analyzing and comparing the synthesis methods of traditional board-level multi-channel power amplifiers,a design method of on-chip T-type combined into a network is proposed,which effectively reduces the chip area and achieves better power synthesis effect.Combined with the proposed on-chip integrated transformer matching,the final chip achieves better performance.3.Research on ultra-wideband power synthesis amplifier based on on-chip analog predistortion technology.By comparing traditional predistortion methods and analyzing the distortion behavior of transistors and amplifiers,a relatively simple on-chip analog predistortion method is proposed.At the same time,on the basis of the on-chip integrated transformer matching,the function and advantages of the transformer in the ultrawideband matching are analyzed,and a design idea for the broadband matching of the amplifier is proposed.Finally,the electromagnetic simulation shows that the chip can achieve a relative bandwidth of more than 38.6% and better linearity and power output in the broadband range.