Research On High-speed Optoelectronic Chip Measurement And Calibration Technology

Optoelectronic integrated chips have been widely used in optical communication,optical computing,microwave photonics and other fields due to the advantages of low power consumption,high speed,high reliability,and small size.It is indispensable in the manufacture and application of optoelectronic chips to evaluate the performance or bandwidth of on-chip optoelectronic devices accurately.In this thesis,calibration of microwave adapter network and de-embedding the contribution of electro-optic and photoelectric devices are studied.The microwave adapter network is calibrated by combining the extended Open-Short-Load(OSL)method and de-embedding method with the T-matrix.Besides,self-calibrated microwave characterization of high-speed optoelectronic chips is realized by advanced swept frequency method by means of photonic sampling with a mode-locked laser.The main research contents of this thesis are as follows:(1)Based on the S-parameter theory,the frequency response as well as the reflection coefficient of optoelectronic devices are derived from the S-parameters of the cascade network of optoelectronic devices and the effect of microwave adapter network is removed theoretically by multiplying the inverse T-matrix of the adapter network which is obtained with the extended OSL method.In the proof-of-concept simulation and experiment,the frequency response and reflection coefficient of a commercial MZM and a photodetector(PD)have been measured accurately,which indicates that the proposed method can be effective to calibrate the microwave adapter network.(2)A self-calibrated method for microwave characterization of high-speed optoelectronic devices is proposed based on photonic sampling method with a modelocked laser.The mode-locked laser is used to generate the optical frequency comb(OFC)as the optical carrier and the frequency responses of the cascade network in three different frequency configurations are measured,which help us derive the frequency responses of the MZM and the PD.Based on the simulation and experiment,the relative frequency response of the MZM and the PD and the half-wave voltage versus frequency of the MZM are extracted through frequency sweeping by using a vector network analyzer.This method with simple system and convenient operation eliminates the uneven response of the OFC and avoids the extra calibration for frequency response of optoelectronic devices compared to the traditional swept frequency method.(3)The relative frequency response of a PD chip is measured based on microwave de-embedding and photonic sampling method and the S-parameters of an electroabsorption-modulated laser(EML)is measured to establish the small-signal equivalent circuit model of the EML for characterization of the microwave interaction in the EML.The integrated EML is investigated as an electrical-electrical-optical three-port network,the small-signal equivalent circuit model of the EML is established and the parameters of the model are extracted by curve fitting with the measured S-parameters.Then the microwave interaction in the EML is characterized based on the experiment and simulation,which provides a reference for further device optimization design.