Prepation And Properties Of ZnO Based Photodetectors

As a typical wide band gap semiconductor material,intrinsic zinc oxide has been widely used in the field of ultraviolet photoelectric detection.Nanoscale semiconductor materials have the advantages of large surface area and volume ratio,which has been a research hotspot in recent years.Therefore,this paper focuses on nanoscale zinc oxide based photodetectors.Recently,perovskite(ABX₃)has emerged as a new star in the field of photoelectric detection,which has the advantages of high absorption coefficient,long charge diffusion length and high current carrying capacity.More and more scholars have devoted themselves to the career.However,due to the influence of humidity,heat or ultraviolet radiation,the properties of organic-inorganic hybrid perovskite are unstable.The cesium lead halide inorganic perovskite(Cs Pb X₃,x=Cl,Br,I)is less affected by the environment.The stability of CsPbBr₃ is better than that of Cs Pb I₃ and Cs Pb Cl₃,and it has a response in the green light emission peak.this paper focuses on these two materials,and finally assembled photodetectors sensitive to ultraviolet and green light.(1)This paper mainly compares two methods of preparing ZnO nanopillar array photodetectors.ZnO nanopillar array photodetectors were fabricated on ITO conductive glass substrates by hydrothermal method and chemical weather deposition method,respectively.The electrical properties of the photodetectors prepared by the two methods were analyzed,and the electrical properties of the photodetectors prepared by chemical weather deposition method were found.Then the morphology,crystal structure and optical properties of the photodetectors prepared by chemical weather deposition method were analyzed Characterization of mechanical properties.(2)Inorganic perovskite(CsPbBr₃)quantum dot film photodetectors were successfully prepared in atmospheric environment,and the effects of different temperatures on the photodetectors were compared.By comparing the morphology,crystal structure,optical properties and chemical properties of the photodetectors prepared at different temperatures,it is concluded that the photodetector prepared at120?has the best performance.(3)ZnO nanopillar array/CsPbBr₃ quantum dot film heterojunction photodetectors were successfully fabricated on ITO conductive glass substrate.We designed a hetero structure photodetector,namely ITO/ZnO nanopillar array/CsPbBr₃ quantum dot film,using ZnO nanopillar array as electron transport layer and CsPbBr₃ quantum dot film as light absorption layer,and then carried out a series of characterization tests and performance analysis of the device.