Design Of H-type Beam Resonant MEMS Pressure Sensor

MEMS pressure sensor has the advantages of high measurement accuracy,easy mass production,and long-term stability due to its structural characteristics and working principle.Its manufacturing process is compatible with traditional integrated circuit process,and has been widely used in aerospace,intelligent manufacturing,automotive electronics and biomedical fields.With the development of advanced manufacturing and artificial intelligence technology,combined with the characteristics of high sensitivity,small product size and low power,the resonant MEMS pressure sensor has been the focus of research in universities and scientific research institutions.Traditional pressure sensors are mainly driven by electrostatic,electrothermal and piezoelectric excitations,which have many drawbacks such as large non-linear variation,complex structure and high difficulty to achieve.Based on the current research status,this dissertation designs an H-type beam resonant MEMS pressure sensor,which uses electromagnetic excitation/ electromagnetic detection.The sensitive structure mainly consists of H-type doubly-clamped lateral beams,silicon island and pressure-sensitive film.The sensor model is designed by Solid Works,and the sensor is analyzed and verified by ANSYS.The first six order modal analysis of H-type doubly-clamped lateral beams,stress deformation simulation and stress simulation,as well as the overall simulation of the pressure sensor under no-load,full scale,and overpressure,have been verified to obtain parameters of the sensor.The results show that: in the range of 0 ? 300 k Pa,the highest over-pressure is 1.2×FS,the intrinsic frequency is 57.984 k Hz,the sensor sensitivity up to 66.98Hz/k Pa,and the nonlinear error is less than 0.15%×FS.Finally,according to the simulation and optimization results of the pressure sensor,based on the MEMS manufacturing specification,process flow design is completed by photolithography,DRIE,TSV technology and vacuum packaging.