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Reliability Design Of Digital Circuit Based On Partial Reinforcement

Posted on:2022-07-01Degree:MasterType:Thesis
Country:ChinaCandidate:G YangFull Text:PDF
GTID:2518306509995549Subject:IC Engineering
Abstract/Summary:PDF Full Text Request
In the field of aerospace,electronic equipment is widely used.But there are aging and reliability problems in electronic equipment.These problems have been paid more and more attention.In the cosmic environment,the single event effect will affect the reliability of integrated circuits;In addition,there is NBTI effect in transistors,which will lead to device aging and reliability degradation.For the single event effect,the main research direction is to improve the reliability of each device in the system,and then improve the reliability of the system.Most of the researches on the reliability of IC transistors adopt critical path reinforcement without considering the critical path offset.In this paper,we propose a solution for local reinforcement of single event effect and a solution for critical path offset caused by NBTI effect.This paper is divided into four modules,MOS module,algorithm module,NBTI effect test module,single event effect test module.For NBTI effect,this paper focuses on the time delay variation between devices.The reliability of NBTI effect will affect the number of interface traps on devices,and then lead to the change of threshold voltage,and finally lead to the change of time delay between devices,Therefore,MOS modules classify the number of interface trap changes generated by different sizes of devices to ensure the accuracy of time delay changes;For the single event effect,because the single event effect will not cause the aging of the device,the MOS module mainly includes the area and other parameters.Algorithm module includes the core algorithm proposed in this paper,such as critical path algorithm,average delay increment algorithm and so on.NBTI effect test module and single event effect test module are tested by generating random circuits and gradually increasing the number of electronic devices.The experimental results show that the reinforcement scheme proposed in this paper has good effect.For the critical path reinforcement scheme,when the number of devices is in the order of 100,the area cost of the global reinforcement(currently the most commonly used)scheme is 30%,and the reliability of the global reinforcement is 84.6%.After increasing the number of devices,the reliability of 91.7% can be achieved at the cost of 22.7% of the area of the global reinforcement scheme.For the NBTI effect,compared with the traditional scheme,the number of devices to be reinforced is reduced by 45.6%.
Keywords/Search Tags:Reliability, Critical Path, Partial Reinforcement
PDF Full Text Request
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