Studies On Egg Protein Gated Oxide Electric-double-layer Neuromorphic Transistors

As transistor technology gets closer to the limits of Moore's Law,the demand for next-generation devices with higher performance and energy efficiency is growing rapidly.Neuromorphic devices designed to imitate the functions of biological neurons and synapses may provide new ideas for the post-Moore's Law era.In various neuromorphic devices,the unique interface coupling and interface electrochemical effects of the electrolyte-gated electric-double-layer transistors(EDLTs)are similar to the dynamic response behavior of biological synapses.In addition,the huge EDL capacitance and electrochemical reaction of EDLTs can reduce the gate voltage and the power consumption of the device.Therefore,using EDLTs to achieve synaptic bionics to construct neural networks plays an important role in the post-Moore's Law era.In this thesis,a green and environmentally friendly oxide EDL synaptic transistor was developed using biological material albumen as the electrolyte,and its electrical properties were discussed.Using its unique electric double layer coupling and electrochemical doping behavior,applications in synaptic bionics are deeply explored.Main contents can be summarized as follows:First of all,preparation and performance study of albumen-based electrolyte membrane.The albumen electrolyte film was prepared by spin-coating method.The maximum leakage current is less than 15 n A,the proton conductivity is as high as7.0×10^-4 S/cm,and the EDL specific capacitance is greater than 1?F/cm²,indicating that the film is an ideal platform for formation of EDL.Sencondly,Research on the preparation and performance of oxide EDL thin-film transistors.Designed and prepared an albumen-gated ITO EDL thin-film transistor based on a commercial ITO conductive glass substrate and a flexible albumen-gated ITO EDL thin-film transistor based on a commercial ITO conductive PET substrate.Both of these transistors exhibit excellent transistor performance,such as high I_ON/OFFratio,low subthreshold swing,high field-effect mobility,etc.In addition,flexible ITO thin-film transistors have good bending stability.Moreover,construction of a low-voltage drive inverter.A low-voltage resistive load inverter is obtained by connecting oxide thin-film transistors and fixed-value resistors in series.The inverter has a low operating voltage,full swing characteristics,excellent inverter performance,and realizes various signal processing functions.Once more,imitated biological synaptic plasticity.On the ITO EDL synaptic transistor,it can mimic biological synaptic plasticity,such as excitatory postsynaptic current(EPSC),paired-pulse facilitation(PPF)and long-term potentiation(LTP);On the flexible ITO EDL synaptic transistor,the quantal release,stochastic release,and excitatory or inhibitory release characteristics of neurotransmitter release dynamics are emulated by using gate voltages of different amplitudes,numbers,and polarities.Finally,imitated the human brain's learning,memory and arithmetic functions.On the ITO neuromorphic transistor,transition from short-term memory(STM)to long-term memory(LTM)is realized,imitating the experience learning and target learning behavior.Three kinds of spike-timing-dependent plasticity(STDP)learning behaviors are simulated on a single flexible ITO neuromorphic transistor.Finally,using spike-number-dependent plasticity(SNDP),the algebraic operations of addition,subtraction,multiplication,and division are realized for the first time on a single neuromorphic transistor.