Study On Preparation Of Memristor Based On Organic Materials And Its Charge Transport Mechanism

Although semiconductor integrated circuit technology has made great progress in Resistive Random Access Memory(RRAM),it is still difficult to realize in extremely complex integrated circuits.It has been gradually realized that the application of sustainable electronic devices in electronic products is great prospects.In this paper,organic materials are selected as the dielectric layer of RRAM for experimental study.First of all,we have prepared a memristor which can adjust the memristor performance by pH value,and comprehensively analyzed and demonstrated the performance of the devices.The experimental results show that the device has multi-level memory operation and multiple resistance states,which indicates that the device has a good application prospect in memory operation and multi logic operation.Among them,Ag/(C₇H₇O₄N)_n/FTO structure memristor has unique capacitance effect and Negative Differential Resistance(NDR)effect.The experiment proves that the hysteresis curve of non-zero-crossing and multiple resistance states are feasible.In the self-colored dielectric layer(C₇H₇O₄N)_n,the memory behavior modulated by p H value was observed for the first time.The an emf in the interfaces were responsible for the capacitance effect,while the ion transport in the dielectric layer and the related redox reaction under the applied voltage play a leading role in the multi state resistance switching behavior and NDR effect.Secondly,capacitive devices have drawn a beautiful application scene in electronic device systems ranging from touch sensors,energy storages and multifunction transistors,but serving as research of memristor is still blank.A memristor with Ag/(C₆H₁₀O₅)_n/FTO structure was prepared by using sweet potato peel powder as dielectric layer.The characteristic of current and voltage hysteresis is typical capacitive behavior.Because the current voltage hysteresis curve of non-zero-crossing has a stable resistance holding state,it is feasible to used it as non-volatile data storage.The charge transfer at the Ag/(C₆H₁₀O₅)_n and(C₆H₁₀O₅)_n/FTO interfaces,and the interplay between Ag⁺and charges are responsible for this non-zero-crossing current voltage characteristic curve.Then,from the point of view of preparing flexible electronic devices,we select flexible PET as the substrate and use sweet potato peel powder as dielectric layer to prepare flexible organic memristor.The device has stable storage performance and large resistance switching ratio.When the voltage amplitude of scanning voltage is large,the current voltage curve of the device shows that resistance switching and NDR effect coexist stably.In order to conduct detailed mechanism analysis,two materials with different work functions(Ti and ITO)as the bottom electrode were prepared Ag/(C₆H₁₀O₅)_n/Ti/PET and Ag/(C₆H₁₀O₅)_n/ITO/PET devices.Through the analysis and fitting of the data,the charge conduction process of the flexible organic memristor is revealed,which provides an important theoretical method for the analysis of the current voltage hysteresis curve.