Research On Low Power GeSb Phase Change Memory Based On O Doping

With the rapid development of information technology,existing storage technologies have become increasingly difficult to meet market demands,and research and development of new storage technologies has become an important trend for future development.Phase change memory,with its fast read and write speeds,high storage density,and low operating power consumption,has become the most promising next-generation storage technology.Three-dimensional storage technology based on phase change memory has made a significant breakthrough in recent years.However,with the continuous improvement of device integration,the problem of thermal crosstalk between memory cells becomes more and more serious,and as the temperature of the device increases,resistance drift will also cause misreading and other issues,affecting the reliability of the device.In view of the above problems,this paper proposes a low-power Ge Sb phase-change memory based on O-doping.The device performance is studied through related electrical tests,and its operating power is calculated.Finally,the phase-change material is analyzed in combination with physical characterization methods.The working mechanism explains the reasons for the lower power consumption of the device.The main research results are as follows:(1)The influence of different device structures on power consumption was analyzed,key process parameters such as PVD,UV lithography,and electron beam lithography were adjusted and the device structure was optimized.Thin film samples with different composition ratios and memory devices with different feature sizes were prepared.(2)The effect of material composition ratio on temperature characteristics was studied by in-situ annealing test,and the test sample with the optimal composition ratio was selected.The corresponding memory device was prepared for relevant electrical tests.The DC I-V,pulse erase/write and cycle characteristics of the memory cell were studied,and the operating power consumption of the memory cell was calculated.It was finally proved that the memory device can be used without a thermal resistance layer and Under the premise of reducing the feature size of the cell(feature size 250 nm),the power consumption of the device is reduced to 10 f J,which is far lower than the traditional phase change memory and has the potential for further reduction.(3)The mechanism of reducing the power consumption of the memory device was studied.A phase change mechanism based on spinodal decomposition was proposed.After the Ge Sb phase change material is doped with O,the doped O element will form Ge-O phase separation with Ge,refine the grains,hinder the crystallization process of Ge Sb,and make it a heterogeneous phase structure with spinodal decomposition effect.Phase change materials with this structure can control the degree of phase separation in the system by means of temperature,electrical pulses,lasers,etc.to achieve the transition between different resistance states.Utilizing the characteristics of local control can effectively improve the heating condition of the PCM,increase the heating efficiency,and reduce the operating power consumption of the device.