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Thin Film Growth And Simulation Research Based On Magnetron Sputtering Technology

Posted on:2022-07-12Degree:MasterType:Thesis
Country:ChinaCandidate:X Q WangFull Text:PDF
GTID:2511306494994379Subject:Textile Science and Engineering
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The research of the nano-film is currently a hot point in the field of material science.Compared with ordinary solid materials,nano film has the advantages of special structure,excellent performance and less consumables,so it is favored by various fields.In the field of textile,the research on the preparation of nano films on the surface of textiles to realize functionalization is increasing year by year.Magnetron sputtering technology is widely used in the preparation of thin films.It has the advantages of rich target materials,uniform and smooth surface,nanometer thickness and high purity.The thickness and composition of the film can be controlled by controlling the experimental parameters,and the repeatability is strong.In this thesis,the films were deposited on silicon wafer by magnetron sputtering using graphite and copper as the target.From a microscopic point of view,to study the effects of time,background vacuum,pressure,power and sputtering method on the thickness,chemical structure and surface morphology of the films.The research results show that:(1)Sputtering time has almost no effect on the deposition rate of the carbon film.As the sputtering time increases,the content of sp~3 hybridization in the film increases while the content of sp~2 hybridization decreases,and the roughness tends to increase.(2)High vacuum has an effect on the growth rate,chemical structure,and surface morphology of the carbon film.Under high vacuum,the growth rate of the film is significantly increased.The sp~2 hybridization is higher and the roughness is lower.(3)The pressure has little effect on the chemical structure of the carbon film.There are optimal parameters for the growth rate of the film prepared under different pressures.In the experiment,when the sputtering is 0.8 Pa,the film thickness is the largest;the roughness generally decreases with the increase of pressure.(4)The power has little effect on the growth rate of the carbon film primarily.When the power reaches 140 W,the growth rate of the film is obviously accelerated;with the increase of the power,the sp~2 hybridization in the thin film carbon film increases significantly,and the roughness is Increase first and then decrease.(5)DC sputtering and RF sputtering use different power sources,so it has an impact on all aspects of the film.The deposition speed of DC sputtering is faster,and the sp2 hybrid content in the carbon film is significantly higher than the sp~3 hybridization,and The roughness is also larger.Monte Carlo method is used to simulate the two-dimensional growth of thin films and obtains simulation diagrams of film growth under different particle numbers and different walking steps.By analyzing the experimental results and simulation results,it is concluded that with the increase of the number of deposition particles,nuclei grow on the substrate,and gradually grow into clusters,and clusters grow into islands,connect to each other to form a maze structure,finally,a continuous film was formed.By analyzing the surface morphology and roughness of copper film and carbon film,combined with the simulation results,it is found that the growth mode of copper film and carbon film is the same.The pressure,power and other factors affect the energy of the target particles when they are deposited.Corresponding to the simulation results,it affects the maximum number of walking steps of the particles,thus affecting the size and number of clusters formed by target particles.The larger the maximum walking steps of particles,the less the number of clusters and the larger the size.
Keywords/Search Tags:Magnetron sputtering, film growth, influencing factors, Monte Carlo method, numerical simulation
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