Theoretical Study Of Two-dimensional Electron Gas In InAlN/GaN Heterostructures

Gallium nitride is an important third generation semiconductor material.With its excellent performance,it is widely used in aerospace,national defense and military industry,life consumption.InAlN/GaN heterostructure is the core structure of high efficiency,high frequency and high power devices.The core of InAlN/GaN heterostructure is 2DEG.In this paper,the properties,principles and applications of gallium nitride materials and heterogeneous structures are systematically introduced.The characteristics of 2DEG in InAlN/GaN heterostructure are analyzed in detail.1.The stable structure of gallium nitride is wurtzite and belongs to hexagonal crystal system.In this paper,the conclusion of the cubic crystal system,"the same crystal plane is perpendicular to the crystal direction",is introduced into the hexagonal crystal system through the modified conditions of calculation,and the wrong conclusion in some textbooks is corrected.2.The origin of 2DEG in gallium nitride heterostructure remains unanswered.In this paper,a new viewpoint is proposed that 2DEG comes from valence band electrons.Through the barrier into the guide zone,and then further into the channel layer.This viewpoint can be used to explain why the barrier layer has a critical thickness.3.In this paper,a physical model for solving 2DEG is established based on the most basic physical theory.4.Based on the algorithm for solving 2DEG established in this paper,the potential well,quantum sub-energy level,wave function and distribution of 2DEG in InAlN/GaN heterogeneous structure with InAlN barrier layer under different strain states are solved.5.In this paper,the InAlN/GaN heterostructure of wurtzite structure GaN layer is proposed,and the advantages of this type of structure are analyzed by MS material simulation software.