Effects Of High Temperature Storage On The Reliability Of Semiconductor Lasers

High-power semiconductor lasers have their place in many fields due to their small size,light weight,low cost,high power,and high brightness.And the reliability of semiconductor lasers has become an increasingly important factor in measuring the quality of semiconductor lasers.Most of the laser reliability researching work usually aim to the working-state lasers.For the reliability of the semiconductor laser under the non-working state,such as the impact of high temperature storage on the performance of the semiconductor laser,what the inherent physical law in it.There are few reports on this aspect.The main work of this paper is to study the performance change of semiconductor lasers after storage under non-operating conditions through high-temperature accelerated storage experiments,and analyze the intrinsic factors afecting the performance parameters(power,wavelength,etc.)of semiconductor lasers physical mechanism.The main research content of this article is divided into the following two parts:Studying the changes of power,wavelength of the quasi-continuous(QCW)300W device after storage at 45℃/85℃/100℃/125℃ l 150℃.The quasi-continuous(QCW)300W device has undergone storage at 45℃/85℃/100℃/125℃/150℃.After the storage at 45℃/85℃/100℃/125℃/150℃,the power fluctuates within± 5%,the wavelength of the device is blue-shifted,but the range of the blue shift is not large;And after the device is stored at 100℃/125℃/150℃,the power of the device is greatly attenuated,and the wavelength of the device has a greater degree of blue shift.Studying the changes of power,wavelength,efficiency and center-wavelength of the quasi-continuous(QCW)500W device after storage at 45℃/85℃/105℃/125℃/150℃.It is found that the power of those devices which have experienced the storage enviorment temperature at 45℃/65℃/85℃ conditions,fluctuates within ±5%,and the wavelength of which has blue-shifted,but the extent of blue-shifting is not too large.Through analysis,it is found that 85℃ is a critical point for high-temperature storage of the device,after which,the power of the device begins to show a declining trend,after undergoing storage temperature at 105℃/125℃/150℃,the power of the device has greatly attenuated,and the wavelength of the device has a greater degree of blue shift.According to reports,the stress introduced in the device during the welding process leads to an external uniaxial compressive strain to the devices.Since the changing process of temperature during the device storage is similar to process of welding,the stress introduced by the storage is also the external uniaxial stres,meanwhile the cold wavelength of the device has blue-shifted,so the external stress introduced by the storage,which can also be concluded as the uniaxial compressive strain has widdened the band gap of the device.After high temperature storage,the device becomes compressived strained,so the wavelength also shifts blue.However,the widening of the band gap caused by compressive strain will make the relative depth of the potential well and the barrier continue to decrease,the effect of constrain to the carrers will decline.The phenomenon is more prominent after the device has been stored at three temperature 100℃/125℃/150℃.