Research And Design Of Rf Switch And Driver Amplifier

As the developments of the techniques of the wireless communication,the radar technology is widely used for the target recognition,the location detection,the medical care health monitor and so on.As the hardware supporting the application of the radar,the performance of the T/R（Transmitter and Receiver）module affects the accuracy of the message transmission and collection.As the key components of the T/R module,RF（Radio Frequency）switches and RF DAs（driver amplifier）attract many scholars and engineers.The RF switches and RF DAs are also studied and designed in this thesis,and the main works and contributions are as follows,1)To support the design of the RF switches and RF DAs,the small signal of the transistors including switch transistors and depleted transistors and the large signal model of depleted transistors are established in this thesis.Meanwhile,the small signal model of the passive devices based on electromagnetic simulation is established.All of those models are used for the design of RF switches and RF DAs.2)In order to improve the IL（insertion loss）,the switch time and the area of the switch,a DC-18 GHz single-pole double-throw switch is proposed in this paper.The post-layout simulation shows that the on time is of 4.61ns and the off-time is of 3.55ns,and the IL is larger than-1.1d B.The area of the presented switch is 840×820μm^2.3)To enhance the isolation of the switch,an X-band single-pole double-throw switch with RC parallel structure is presented in this thesis.The post-layout simulation shows that the isolation of the proposed switch increases by 5d B,which is compared with the traditional structure of the switch.4)In order to improve the out-of-band suppression between multi-band T/R modules,a single-pole double-throw switch operates in C/X band is proposed in this thesis.The post-layout simulation shows that the switch realizes the switch function and the band-pass function than helps to suppress the out-of-band signal.5)To obtain the high linear outpower,the parallel structure of the transistors is used for designing a X-band DA.The post-layout simulation shows that the 1d B compress out power is of 23 d Bm,which is larger than its’traditional counterparts.6)An X-band DA is designed to improve the bandwidth and gain flatness in this thesis.The post-layout simulation shows that the gain is larger than 20 d B and the flatness is of±0.2 d B.