Researach On Two-dimensional Indium Selenide Hot-electron Transistor Devices

In the field of microelectronics and integrated circuits,silicon-based semiconductor devices,along with the physical size reduction of materials and devices,have made remarkable achievements from microprocessors in the late 1960s to automation,computers and smart phones in the early1970s.At present,two-dimensional indium selenide and related two-dimensional（2D）semiconductor materials break through the limitations of traditional device structures due to their unique structures and properties,and the collaborative combination of two-dimensional materials and silicon chips is expected to provide a heterogeneous platform,which will provide great impetus for the continuous innovation of silicon-based semiconductor device structures and properties.In this thesis,two-dimensional indium selenide based hot-electron transistor transistors are studied.Based on two-dimensional indium selenide materials and optimized device configuration,the performance of the hot-electron transistor transistors is designed,fabricated and analyzed.Firstly,from the basic characteristics of two-dimensional materials to the fabrication and integration of van der Walls heterojunction,the integration strategy of two-dimensional semiconductor materials and van der Walls heterojunction is proposed.At the same time,the working principle and research status of new thermoelectric devices are analyzed from the dominant mechanism of carrier transport;Secondly,the application of two-dimensional indium selenide semiconductor in microelectronic devices is summarized,and the two-dimensional indium selenide semiconductor materials are obtained by mastering the mechanical stripping and chemical vapor deposition processes;Thirdly,focusing on the configuration design and construction of two-dimensional indium selenide hot-electron transistor transistor,the micro working mechanism of two-dimensional indium selenide hot-electron transistor transistor and traditional transistor is compared,and three transistor configurations are proposed,and the device electrode shadow mask is designed independently;Fourth,the two-dimensional indium selenide hot-electron transistor transistors were successfully fabricated by various microelectronic processes.The output and transfer characteristic curves of In Se and In₂Se₃ FETs were measured.The results show that a Schottky junction is formed between Au electrode and In Se,which is similar to a unidirectional conducting PN junction,and In₂Se₃ has no gate control characteristic,This may be caused by electric leakage between vertical electrodes or discontinuity of In₂Se₃ material;Finally,the electrical characteristics of the device are tested under common emitter bias.In this thesis,starting from the preparation of two-dimensional indium selenide materials,we get through the shadow mask process to prepare hot-electron transistor transistors,which provides a new idea for the application of two-dimensional indium selenide materials in the field of integrated devices.