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Research On Plasma Gas Source Furnace Of Molecular Beam Epitaxy Equipment

Posted on:2022-05-28Degree:MasterType:Thesis
Country:ChinaCandidate:M Z TaoFull Text:PDF
GTID:2491306572978799Subject:Mechanical engineering
Abstract/Summary:PDF Full Text Request
With the rapid development of the electronic information age,the third-generation semiconductor materials represented by nitrogen and oxides have become a hot spot for research and application in the world today.Molecular beam epitaxy is an important technology for the growth of nitrogen and oxide semiconductor materials.One of the core components of molecular beam epitaxy equipment is the radio frequency plasma gas source furnace.However,my country is relatively backward in the development and manufacturing of semiconductor material equipment and is used in actual production.The radio frequency plasma gas source still relies on imports.Under the increasingly tense international situation,if China wants to quickly break through the restrictions,it must localize the key components and key process links of certain key core equipment.In this paper,the discharge characteristics of radio frequency inductively coupled nitrogen plasma are systematically studied,and a generator of radio frequency nitrogen plasma source is developed and designed at the same time.It aims to make a certain contribution to the research and development of domestic radio frequency plasma sources and the optimization of the production process of nitrogen and oxygen semiconductor compound materials.Firstly,according to the working principle of the radio frequency inductively coupled plasma source,a two-dimensional fluid model of charged particles and neutral particles is established.The plasma is simulated by the inductively coupled plasma module in the numerical simulation software COMSOL,and the state of the radio frequency inductively coupled plasma is described by the electromagnetic field module,electronic fluid module and heavy particle fluid module which are mutually coupled modules.At the same time,for the nitrogen discharge,the choice of particles,chemical reactions and related reaction coefficients considered in the chemical model was discussed in detail,and the chemical model was verified with a global model.Secondly,a simulation study of the radio frequency nitrogen inductively coupled plasma was carried out to explore its discharge characteristics under constant pressure.At the same time,the external adjustable parameters,namely the discharge cavity,the radio frequency inductance coil,the pressure and the changes in the radio frequency power,on the nitrogen plasma discharge were analyzed.The influence of characteristics provides theoretical support for the structural design and optimization of the generator.Finally,considering the actual process conditions,the influence of the background gas flow field on the nitrogen discharge is studied.According to the simulation research results and actual work requirements,a generator of radio frequency inductively coupled plasma source was designed and its structure was optimized.Finally,a radio frequency plasma source generator was developed,which can meet the actual process requirements and has excellent working performance.
Keywords/Search Tags:Molecular beam epitaxy equipment, RF inductively coupled plasma source, Plasma fluid model, Nitrogen discharge
PDF Full Text Request
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