| As an inorganic functional material,WO3 has very important scientific value and huge potential capabilities.It has been actively researched in many aspects,such as electrochromic,photocatalytic degradation,toxic gas sensor,microwave absorption and new battery applications,but the research in low voltage varistor ceramics is very few.As WO3-based ceramics have low voltage and low working current,WO3-based ceramics can be considered as low voltage varistor resistors for practical applications in low-voltage and low-current electronic circuits.However,the exploration of preparation process and formulation system of WO3 ceramics are very few currently,and their preparation process is single and nonlinear coefficient is low.Therefore,it is particularly important to develop new sintering technologies and formulations to improve nonlinearity.Based on the spark plasma-assisted cold sintering process,this article explored the effects of new preparation processes and new doping systems on the microstructure and macroscopic electrical properties of WO3 ceramics.At the same time,WO3-based ceramics with high nonlinear coefficients were prepared and the relationship between its microstructure and macroscopic electrical properties was revealed.The spark plasma-assisted cold sintering process was used fabricate WO3-based ceramics.And the influence of different Mn O2 doping content on the electrical properties and microstructure of WO3-based varistor ceramics were studied.Research shows that high density WO3-based ceramics can be successfully prepared by the spark plasma-assisted cold sintering process.Compared to the un-doped WO3 sample with breakdown strength of 12.3 V/mm and nonlinear coefficient of 2.5,varistor performance of 5 mol%Mn O2-doped sample is significantly improved(i.e.,breakdown strength of 12.5 V/mm and nonlinear coefficient of 10.3),which nonlinearity is about 4times higher than un-doped WO3 with similar breakdown field.Meanwhile,the microstructure and phase distribution of the samples were analyzed by XRD,SEM and EDS.It was found that the Mn2+WO4 will affect the grain interface and thus affect the varistor properties of WO3.The grain and grain boundary resistance of the samples were analyzed by impedance spectrum.It was found that the grain boundary resistance of the samples increased from 6.29×104Ωto 6.75×106Ωafter the doping of Mn O2.Appropriate doping can increase the dielectric constant of WO3 ceramics and reduce the dielectric loss tanδto 0.08.On the basis of the same process,the effects of different content of NiO doping on the electrical properties and microstructure of WO3-based varistor ceramics were further studied.The experimental results show that Ni O doping can also get WO3-based varistor ceramics with high density.When the Ni O doping content is 1 mol%,the varistor performance of the sample is significantly improved with a breakdown strength of 11 V/mm and a nonlinear coefficient of 16.According to XRD,SEM and EDS analysis,the addition of Ni O can inhibit the grain growth of WO3.However,further increase of Ni O doping content would lead to decrease of breakdown voltage and nonlinear coefficient.With introduce of Ni O,new phases Ni WO4 are formed in WO3ceramics,which agglomerate on grains and affect their grain interface,thus affecting their varistor and dielectric properties.It is shown that appropriate amount of Ni O doping can effectively improve the grain boundary resistance of WO3,and the dielectric loss tanδ value decreases to 0.47 near 1 kHz. |