Oxidation Behavior Of Two Dimensional Molybdenum Disulfide And Its Homojunction And Heterojunction

The typical representative of two-dimensional transition metal sulfur compounds is two-dimensional molybdenum disulfide.Due to its excellent photoelectric properties,it has broad application prospects in photocatalysis,lithium-ion batteries and supercapacitors.Therefore,two-dimensional molybdenum disulfide is expected to replace silicon in future electronic devices.At present,the research on two-dimensional molybdenum disulfide mainly focuses on its photoelectric properties.However,in the future practical application process,it will inevitably contact with oxygen,so it is very important and urgent to study its oxidation behavior.In this paper,the following samples were prepared by chemical vapor deposition（CVD）and PMMA wet transfer:two dimensional molybdenum disulfide and tungsten disulfide（1L-4L）on Si/SiO₂ and sapphire substrates,1×1 cm 1L 2D-MoS₂、1×1 cm 3L 2D-MoS₂ and 0.5×1 cm 1Lh BN was transferred to 2×2 cm 1L 2D-MoS₂ that the substrate is Si/SiO₂,MoS₂/MoS₂homojunction and MoS₂/h BN heterojunction were constructed.The main contents of this paper are as follows:1.After determining the number of layers as accurately as possible,1L-4L2D-MoS₂ on Si/SiO₂ substrate was put into muffle furnace forhigh-temperature oxidation,and the high-temperature oxidationbehavior and its influencing factors at different temperatures wereinvestigated.2.The oxidation temperature of MoS₂/MoS₂ homojunction and MoS₂/h BNheterojunction was further increased to 340℃（with the interval of20℃）,and the effect of homojunction and heterojunction on theoxidation behavior of two-dimensional molybdenum disulfide wasinvestigated.3.Based on its potential application in space,the oxidation behavior of1L-4L sapphire based 2D-MoS₂ and 2D-WS₂ before and after atomicoxygen irradiation was investigated and compared by using atomic oxygen irradiation to simulate space environment.