Study On The Controllable Forming Of Silicon Internal Structure Based On Thermal-Electric Effect

Silicon internal structure has unique properties in mechanics,optics and electricity,and has a wide range of applications in life sciences,micro/nano devices and other fields.Currently,Si-Si bonding,self-assembly are widely used in the forming of silicon internal structure.However,there are some problems in the above methods,such as uncontrollable forming,complicated manufacturing process and low yield.Based on these,this paper proposes a method of the controll able forming of silicon internal structure based on thermal-electric effect,by changing the initial silicon structure parameters and electric field intensity to control,so as to enrich the manufacturing methods of micro/nano devices with high performance.This thesis mainly studies the controllable forming of silicon internal structure based on theoretical analysis,simulation and experimental research.Firstly,according to the theory of phase field model,the mathematical model of the controllable forming of silicon internal structure by thermal-electric effect is derived.Secondly,the simulation of the forming of silicon internal structure is carried out,and the rules of the controllable forming of silicon internal structure by different thermal and electrical parameters are further studied.Finally,the experimental analysis of the controllable forming of silicon internal structure by thermal-electric effect is carried out.The main contents of this paper are as follows:(1)Based on the theory of phase field model,the mathematical model of the controllable forming of silicon internal structure by thermal-electric effect is studied.Firstly,according to the principle of energy minimization in deformation process,analyses the behavior of silicon atom diffusion and migration,and clarifies the deformation mechanism of silicon structure by thermal-electric effect.Then,according to the thermal-electric effect,the phase field model is constructed to characterize the formation of silicon internal structure by thermal-electric effect.Finally,based on the partial differential equation of diffusion and migration of silicon atoms by thermalelectric effect,the theoretical solution of the mathematical model of the controllable forming of silicon internal structure by thermal-electric effect is obtained.(2)Based on thermal-electric effect,the simulation research of the controllable forming of silicon internal structure is carried out.Firstly,simulates the evolution process of the forming of silicon internal structure,and summaries the forming rules of silicon internal discrete structure.The effects of the initial silicon structure parameters and electric field intensity on the forming of silicon internal structure are studied.Analyzing and summarizing the influence of the above factors on the forming of silicon internal structure,which provides theoretical basis for the preparation of the controllable forming of silicon internal structure.(3)The corresponding experimental research is carried out for the controllable forming of silicon internal structure by thermal-electric effect.The experimental studies on different initial silicon structure and electric field intensity were carried out.Comparing the simulation results with the experimental results,it shows that the simulation results are basically consistent with the experimental results under the sam e initial silicon structure parameters and electric field intensity,to verify the correctness and feasibility of the method of the controllable forming of silicon internal structure by thermal-electric effect.