Modeling And Analysis Of Electromagnetic And Thermal Coupling Simulation For SIC Single Crystal Growth Induction Heating Based On PVT Method

The semiconductor industry has experienced three generations of development,of which silicon carbide(SiC)belongs to the third generation of semiconductors.Compared with the semiconductor material silicon(Si),semiconductor integrated devices made of silicon carbide materials have the characteristics of high temperature and high pressure resistance,radiation resistance,and large band gap.They are widely used in fuel cell vehicles,commercial blue light emitting devices,and aviation Aerospace and other fields.The growth of silicon carbide single crystal materials has become a research hotspot in the development of the semiconductor industry.Whoever masters the advanced growth technology of silicon carbide semiconductors will master the commanding heights of semiconductor industry research.At present,using this method,the preparation process of 6-inch silicon carbide single crystals has been mastered in China,and developed countries such as foreign countries such as Europe and the United States have been able to prepare 8-inch silicon carbide single crystals,and mass production has begun.In recent years,foreign countries have imposed technical blockades on my country’s high-end industrial fields,and China has encountered bottlenecks in 8-inch silicon carbide growth technology.There are many methods for preparing silicon carbide single crystals,but the PVT method is the main method.Because of the huge amount of research experiments and high cost of using PVT method to grow silicon carbide single crystals.Therefore,the establishment of a silicon carbide single crystal production model and the induction heating electromagnetic and thermal coupling simulation of the silicon carbide single crystal growth through finite element computer simulation technology are indispensable technical means.In order to break the "chuck neck" technology of 8-inch silicon carbide single crystal growth,this paper uses ANSYSY software to simulate and analyze the growth environment of 8-inch silicon carbide single crystal,and obtains theoretical research results with certain practical application value.The specific research content is as follows:(1)Based on the research foundation of the PVT method characteristics and the empirical formula for the design of the growth equipment,the relevant dimensions of the graphite crucible and the induction coil for the growth of silicon carbide single crystals are designed.(2)The electromagnetic field of induction heating was simulated and analyzed by ANSYS Maxwe113D,and the influence of the magnitude and frequency of the excitation current on the thermal efficiency was analyzed.(3)Using ANSYS transient thermal analysis and ANSYS Maxwe113D multi-physics unidirectional coupling,the influence of the relative position of the induction coil and the crucible,the height of the induction coil,and the thickness of the insulation layer on the temperature environment in the silicon carbide growth chamber was analyzed.