| With the rapid development of semiconductor technology,because of silicon carbide(SiC)with characteristic of large band gap,high electron mobility and excellent thermal conductivity,it becomes ideal material to manufacture high temperature,high frequency,high power and optoelectronic integrated device.And it widely used in the microelectronic,optoelectronic and photovoltaic industry.In order to reduce the manufacturing cost,the diameter of the crystal is gradually increasing,the thickness decreases constantly,the requirement for cutting technology is getting higher and higher at the same time.Section is the first process of SiC wafer manufacturing,wafer quality directly affect the following process of the material removal rate,wafer yield,processing efficiency,final wafer quality and total processing cost.The SiC is very hard and difficult to cutting,so how to slice silicon carbide in high speed high efficiency,high precision and high quality has become an urgent problem to solve.Because of its narrow cuts,high material removal rate,chip quality and little environmental pollution,diamond wire saw slicing technology becoming more and m ore popular,it will be the direction of future development of the field of hard and brittle materials such as SiC slice technology.According to the brittle materials indentation fracture mechanics principle,studied the removal mechanism of electroplated diamond wire saw cutting of monocrystalline silicon carbide material.Established the geometric model of the cutting process,analyzed the diamond grits average depth of wire surface circumferential distribution of abrasive particles and at different angles in the cutting process.Analyzed the formation of contact arc length,established prediction model of the workpiece and wire contact arc length with a method single loop.The experiment of cutting SiC wafers was done on reciprocating and rotating electroplated diamond wire saw cutting machine,analyzed the workpiece feeding rate,wire saw velocity and workpiece speed influence on the contact arc length,compared with the results of Matlab simulation,verified the correctness of the model,to provide theoretical guidance for further experimental research.Analyzed the normal force and the tangential force of single diamond grit,established force theory model in the process of diamond wire saw cutting SiC single crystal wafer.And according to the experiment,verified and analyzed the theoretical model.Studied the relationship between the length of contact arc and the sawing force,and the influence of processing parameters on the sawing force. |
