Energy-Saving Reform And Process Optimization Of Multi-Crystallinc Silicon Casted Furnace

Photovoltaic power generation industry achieve to the parity of power grid,to reduce the cost of photovoltaic power generation is the key.How to reduce the cost of photovoltaic power generation is an important issue.This subject is from the lower energy consumption of multi-crystalline ingot to reduce the cost of photovoltaic power generation.In view of the existing multi-crystalline ingot furnace thermal field structure do a detailed investigation and research,and through the computer simulation analysis of temperature field and fluid field and heat flux,found substantial heat loss between insulation cage side and DS-block in the crystal growthed stage.In view of this problem,a new type of thermal field structure with high temperature zone and low temperature zone separation was developed.This structure effectively reduces the heat loss between the insulation cage side and the DS-block,the growth process of silicon liquid convection effect,crystal growth interface is more smooth.At the same time,by adjusting the insulation cage opening and TC1 temperature control of ingot formula and matching operation.Comparative analysis before and after modified operating power and power consumption data,grain growthing direction,the poor rate of silicon ingot,the lifetime map of silicon ingot at al.On the crucible wall crystal silicon grain is inclined to the center before the modified,but on the crucible wall silicon grain vertical growth after the modified,the solid-liquid interface of crystal growth is more smooth,the experimental results is consistent with the computer simulation analysis.The multi-crystalline ingot furnace after modified,greatly reduces the power of ingot operation,the power of the crystal growthing stage reduced by 20%.The total ingot consumption fell 13.32%.After modified,the yield of the ingot does not bad,the failure rate of N type、the failure rate of inclusion、the failure rate of resistivity and the failure rate of low lifetime are consistent with the quality of before modified.After the modified,the solid-liquid interface is more flat,the hot-zone is good for multi-crystalline crystal silicon growth,reduce the side part of the crucible wall oblique grain growth,lower lifetime "pattern" of the side silicon block。after the modified,the cell conversion efficiency of multi-crystalline silicon wafers increased by 0.03%.