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Structural Design And Li/Na/K Storage Mechanism For MoSe2-based Heterostructure

Posted on:2022-03-21Degree:MasterType:Thesis
Country:ChinaCandidate:J YangFull Text:PDF
GTID:2481306737455894Subject:Materials Science and Engineering
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MoSe2,as a typical transition metal chalcogenide(TMDs),has attracted much attention due to its unique crystal structure,high specific surface area and low voltage plateau.However,its wide band gap(1.55 e V)results in poor electronic conductivity of MoSe2,which limits its further development in the field of energy storage.Constructiing conductive material/MoSe2heterojunction is an effective way to solve this problem,but its structural properties and Li/Na/K storage mechanism need to be further studied.In this paper,the crystal structure,electronic properties and Li/Na/K storage mechanism of four heterojunctions based on MoSe2(VSe2/MoSe2,Graphene/MoSe2,Nb Se2/MoSe2,Ti S2/MoSe2)were systematically studied by first principles calculation.It is found that the introduction of appropriate vacancy defects is an important method to improve its Li storage performance,and the internal mechanism was discussed.Its specific content and conclusion are as follows:(1)Mechanism of Li/Na/K storage in VSe2/MoSe2heterojunction.Firstly,the optimal configuration of VSe2/MoSe2heterojunction was constructed,and the binding energy of Li/Na/K adsorbed in the heterojunction was calculated.It shows that Li/Na/K is more easily adsorbed on the interlayer HVsite of the heterojunction,which is located in the center of the six membered ring surrounded by Se in VSe2layer.Then,the interlayer diffusion barriers of Li,Na and K in the VSe2/MoSe2heterostructure are 0.48 e V,0.21 e V and 0.11 e V,respectively.The interlayer diffusion barrier of Li in V0.92Se1.84/MoSe2heterostructure is 0.07 e V.Therefore,the introduction of appropriate VSe2-type vacancy defect in VSe2/MoSe2is an effective method to improve obviously its Li interlayer diffusion.Then,molecular dynamics method was used to further prove that the V0.92Se1.84/MoSe2heterojunction has good thermal stability at 300 K;In addition,the V0.92Se1.84/MoSe2heterojunction has metal characteristics and good electronic conductivity.(2)Mechanism of Li/Na/K storage in Graphene/MoSe2heterojunction.Firstly,the most stable configuration of Graphene/MoSe2heterojunction was constructed by calculating the mismatch degree.The binding energy of Li/Na/K in the heterojunction was compared.The results show that the interlayer MMosite of the heterojunction(above Mo)are the most stable adsorption sites of Li and Na,while K is stably adsorbed at the HGsite of Graphene surface(above the center of C 6-membered ring).Secondly,the interlayer diffusion barriers of Li and Na in the Graphene/MoSe2heterostructure are 0.36 e V and 0.20 e V,respectively.The diffusion barrier of K ions on the Graphene surface is 0.087 e V.And the interlayer diffusion barrier of Li ions in the heterojunction with single C atom vacancy(SV–Graphene/MoSe2)is 0.03e V.Therefore,the interlayer Li can diffuse much faster in the SV–Graphene/MoSe2heterostructure.Meanwhile,SV-Graphene/MoSe2heterojunction can maintain good metal property and thermal stability.(3)Mechanism of Li/Na/K storage in Nb Se2/MoSe2heterojunction.Firstly,the Nb Se2/MoSe2heterojunction with stable structure was constructed by single-layer Nb Se2and single-layer MoSe2.By comparing the binding energies of Li,Na and K adsorbed on the Nb Se2/MoSe2heterojunction,it is determined that the most stable adsorption site of Li and Na is the interlayer MHsite(the hollow site of Se-Mo six membered ring),The most stable adsorption site of K is the TNbsite on the surface of Nb Se2(the top of Nb).Then the diffusion barrier of Li/Na/K is calculated by CI-NEB method.The interlayer diffusion barriers of Li and Na are 0.668 e V and 0.390 e V,respectively.The diffusion barrier of K on Nb Se2surface is 0.049 e V,and the Li interlayer diffusion barrier of Nb0.92Se1.84/MoSe2heterojunction is lower than that of Nb Se2/MoSe2heterojunction(0.040 e V vs.0.668 e V).Nb0.92Se1.84/MoSe2heterojunction still has metal conductivity and good thermal stability.(4)Mechanism of Li/Na/K storage in Ti S2/MoSe2heterojunction.Firstly,based on the optimal configuration of Ti S2/MoSe2heterojunction,the binding energy of Li/Na/K was calculated.It shows that the interlayer MSesite(above Se atom)is more conducive to Li/Na intercalation,and K is more easily adsorbed on the surface of Ti S2(above S atom).And the interlayer diffusion barrier of Li and Na are 0.216 e V and0.157 e V,respectively.The diffusion barrier of K ion on Ti S2surface is 0.139 e V.On the other hand,the interlayer diffusion barrier of Li in Ti0.92S1.84/MoSe2heterojunction is only 0.07 e V,which is significantly lower than that in Ti S2/MoSe2heterojunction.At the same time,the Ti0.92S1.84/MoSe2heterojunction still has metal characteristics.The molecular dynamics method further shows that the Ti0.92S1.84/MoSe2heterojunction has good thermal stability at 300 K.
Keywords/Search Tags:First-principle, Heterojunction, Mechanical properties, Vacancy defect, Electronic conductivity
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