Preparation And Application Research Of The Mn_1.2Co_1.5Ni_0.3O₄ Thermosensitive Thin Films On Different Substrates

In recent years,the research of thermosensitive film materials for integrated and intelligent temperature sensors has attracted extensive attention.Although there have been a lot of reports on thermosensitive thin film materials,there are many bottlenecks in the process of device development due to the lack of systematic research on the preparation process of thin film materials.As the supporting material coexisting with the thermosensitive functional materials in the thermal sensitive film system,the structure type,flatness degree and physical properties of the substrate will affect the microstructure,electrical properties and even the structure-activity relationship of the thermosensitive film.Therefore,in the process of exploring the film preparation process,it is necessary to first explore the rationality and adaptability of substrate.Under the guidance of this design strategy,the Mn_1.2Co_1.5Ni_0.3O₄with stable thermal sensitivity was chosen as the basic material for research,and focused on the preparation and application of thermal sensitive films based on Si/Si O₂,Si₃N₄and Al N substrates.By comparing and analyzing the microstructure and electrical properties of the films prepared on the three substrates,a solution to improve the crystallinity and stability of Mn_1.2Co_1.5Ni_0.3O₄thermosensitive films was obtained.The report in this paper is expected to provide technical support for the design and development of thermosensitive thin film devices,and realize the development of temperature sensors that meet the requirements of artificial intelligence,Internet of Things,and other fields.Specific research contents and results are as follows:1.The optimum conditions for Mn_1.2Co_1.5Ni_0.3O₄thermal films on Si/Si O₂substrates prepared by DC magnetron sputtering are as follows:growth power is 40W,growth temperature is 200 ^oC,annealing time is 30 min under air condition,and cooling rate is 10^oC/min.The films prepared under these optimum conditions are single spinel polycrystalline oxides with good crystallinity and high density.The thickness of the films is 205 nm and the sputtering deposition rate is 10.25 nm/min.The B_25/50value was 3440.6 K,the resistivity（64.5（?）·cm）and resistance drift（1.19%）could be controlled to the minimum.2.The Mn_1.2Co_1.5Ni_0.3O₄film prepared at 200 ^oC by DC magnetron sputtering on Si₃N₄substrate has the best crystallinity and density.The thickness of the prepared films is 215 nm and the sputtering deposition rate is 10.75 nm/min.The resistivity of the film is 116.8W·cm,and the B_25/50value is 3565.1 K.Influenced by crystal oxygen content in substrate,the Mn_1.2Co_1.5Ni_0.3O₄/Si₃N₄film has a smaller resistance drift rate（0.96%）compared to the Mn_1.2Co_1.5Ni_0.3O₄/Si O₂/Si film.3.The Mn_1.2Co_1.5Ni_0.3O₄film prepared at 150 ^oC by DC magnetron sputtering on Al N substrate has the best crystallinity and density.The thickness of the prepared film is 325 nm,and the sputtering deposition rate is 16.25 nm/min.The film resistivity is 209.5W·cm,and the B_25/50is 3593.1 K.Compared with the the films prepared on former two substrates,the film grown on Al N substrate has the smallest resistance drift（0.48%）.