Preparation Of Al-Doped ZnO/ZrCu-based Metallic Glass Composite Transparent Conductive Thin Films And Study On Their Optical And Electrical Properties

Aluminum doped zinc oxide（AZO）has the advantages of low temperature growth conditions,abundant raw materials,low cost,no toxic elements,and high environmental stability.The introduction of buffer layer is one of the effective methods to improve the optical and electrical properties of AZO films.Due to the short-range ordered long-range disorder and no grain boundary structure,metallic glass thin films（MGTFs）show unique optoelectrical characteristics,which has attracted wide attention in recent years.In this paper,AZO/Zr Cu-based MGTFs multilayer composite films were by pulsed laser deposition and the effect of the Zr Cu-based MGTFs as buffer layer on the photoelectric properties was studied.The microstructure,optoelectrical properties and surface morphologies of composite films were analyzed by X-ray diffractometer（XRD）,UV-VIS-NIR spectrophotometer,Hall effect tester（HMS）,atomic force microscope（AFM）,and scanning electron microscope（SEM）.The conclusion is as follows.（1）Zr₅₀Cu₅₀ MGTF is used as the buffer layer to prepare the AZO/Zr Cu double-layer composite transparent conductive film.Increasing the thickness of Zr₅₀Cu₅₀ and substrate temperature both promote the transformation of AZO from amorphous to crystalline structure.With the increase of the thickness of the buffer layer,the transmittance of the composite film decreases in the visible region but increases in the near-infrared region,and the sheet resistance first decreases and then increases.The composite film with 4nm buffer exhibits the comprehensive optoelectrical performance.Proper substrate temperature can effectively improve the optoelectrical performance of the composite film.When the substrate temperature is 360℃,the composite film has the best photoelectric performance.AZO（100 nm）/Zr₅₀Cu₅₀（4 nm）film exhibits high transmittance of 82.1%in the visible light region and 81.6%in near infrared region,and the low sheet resistance of 26.7Ω/?.（2）Zr_46.1Cu_43.1Al_8.8Nb₂ MGTF was used as buffer layer to prepare the AZO/Zr_46.1Cu_43.1Al_8.8Nb₂/AZO three-layer composite film.After inserting the Zr Cu Al Nb buffer layer,the transmittance of the composite film in the near infrared region increased.Increasing the substrate temperature can effectively improve the optoelectrical performance of the composite film.When the substrate temperature is350℃,the composite film has the best optoelectrical performance.The average transmittanceis 78.31%in the visible region and 66.96%in the infrared region,and the sheet resistance is 27.11Ω/?.（3）The effect of annealing treatment on the optical and electrical properties of AZO/Zr_46.1Cu_43.1Al_8.8Nb₂/AZO composite films was studied.As the annealing temperature increases,the grain size of the composite film becomes larger.Proper annealing temperature can effectively improve the optoelectrical performance of the composite film.The film annealed at the temperature of 150℃exhibits the best optoelectrical performance.The average transmittance is 79.66%in the visible region and 79.18%in the infrared region.