Resistive Switch And Light Controlled Resistive Switch Behavior Of Oxide Films

Because of low power consumption,high density,high response speed,and good compatibility with CMOS,resistance random access memory(RRAM)is considered to be the best solution to break through the limit of Moore's law and Von-Neumann's bottleneck.In recent years,the strategy of assembling RRAM into functional electronic devices is generally recognized as a suitable candidate in artificial synapse simulation and neuromorphic computing for its low-power and high-density memory.In addition,the RRAM devices with multi-functional integration features have attracted more attention in the way of the usage scenarios of memory and reduce the complexity of integrated circuits.In this paper,The AlOx based resistive memory is fabricated and optimized for low power consumption and improved operational stability.The new application optoelectronic logic and photoconductive memory are suggested and studied.This dissertation is mainly focused on the following:1.Cu doped AlOx thin-film,which is prepared by the magnetron sputtering method,based RRAM devices were fabricated.Compared with undoped AlOx thin-film devices,a low operating voltage at 0.14 V is reached combing with improved durability and retention performance.The results show that the activation energy of atom Cu doped with the metal state is lower than that of atom Cu in the electrode.Compared with atom Cu in electrode,Cu atom doped with the metal state is easier to be oxidized and migrate.At the same time,the granular Cu can enhance the local electric field and shorten the formation path of conductive filaments.Under the less limited current,the doped Cu and the electrode Cu form finer conductive filaments together.2.A self-rectifying RRAM device with Al/AlOX/Cu2O/FTO structure is designed and fabricated,which shows resistance change behavior and low power consumption in multi-electric/optical fields.The results of C-AFM and electrical measurements show that the resistance state transition of the device is related to the migration of oxygen vacancies under voltage and the formation of conductive filaments.In this paper,an "or gate" logic circuit controlled by light field and electric field is proposed based on the change of conductance state of the device under 470 nm illumination.3.An ultraviolet photoreceptor based on anatase TiO2 film was designed and fabricated.Under the electric field applied,the synaptic behavior and persistent photoconductive behavior are reached.Based on the discussion of current relaxation curves under different optical power and irradiation time,the photoconductivity mechanism is related to the electron capture/de-capture process of the defect of the film.Finally,a practice function device combing image memory and processing are suggested for the possible usage in "Computing in Memory".