Plasmon-induced Transparency Effect Based On Metamaterials And Related Applications

Plasmon Induced Transparency(PIT)is a simulated form of classical Electromagnetically Induced Transparency(EIT).It makes the originally opaque medium transparent due to the destructive interference effect of coupling beam in the quantum system.Metamaterials can not only break through the diffraction limit and have the strange electromagnetic properties that ordinary materials in nature do not have,but also have the unique advantages of miniaturization and flexible design.These characteristics enable people to obtain the ability to manipulate electromagnetic waves,that is,the generation,transmission and modulation of photons can be realized in the sub-wavelength range.Since plasmon metamaterials can simulate various quantum interference effects and be successfully integrated in semiconductor chips,which greatly promotes the revolutionary development of photonic devices.The plasmon metamaterial circumvents the extremely harsh experimental conditions required by the traditional EIT effect,such as ultra-low temperature environment,strong and stable lasers,etc.This makes photonic devices based on the PIT effect extremely promising in the fields of slow-light devices,optical storage,quantum switches,modulators,and sensors.The main research results of this paper are summarized as follows:1.A metamaterials structure based on the non-centrosymmetric structure of Dirac semimetal is designed.It has the characteristics of polarization insensitivity and better incident angle insensitivity,which greatly reduces the difficulty of fine processing for traditional centrosymmetric structures.By adjusting the Fermi level(E_F)of Dirac semimetal,its conductivity and dielectric constant can be changed,so that the plasmon device can achieve linearization and free tuning in a broadband range,that is,0.125THz/10me V.This eliminates the need for researchers to reoptimize and design the structure,effectively reducing development time and cost.The results show that this simple plasmon metamaterial based on Dirac semimetal has potential application value in optical storage and slow-light devices.2.A metamaterial structure composed of two U-shaped rings based on Dirac semimetal is designed.By analyzing the surface current and electric field distribution,it is known that the EIR effect is caused by the mutual coupling and destructive interference of bright—quasi-dark modes.The Q value of the sharp reflection peak of the EIR effect can reach 195,and the dynamic tuning in the broadband range can be achieved by changing the Fermi level of the Dirac semimetal.The EIR effect can be used for the detection of biological analytes with a sensitivity of 381GHz/RIU,which is higher than the results of previous studies.3.An H-type metamaterial structure based on semiconductor(InSb)is designed.The influence of geometric parameters,substrate refractive index and optical power on the spectrum of the PIT effect is analyzed.The strong dispersion at the transparent peak can be used for slow light devices.What is interesting is that the group delay can be adjusted by changing the polarization angle.The maximum group delay is 41.92 ps,which has a high slow light capacity.In addition,the permittivity of InSb can be changed by controlling the temperature,so that the PIT effect is tunable,which can be used in temperature sensors and thermo-optical switches.Although the response speed of temperature regulation is slower than that based on photoelectric regulation,it provides new ideas and approaches for the application of semiconductor materials in the PIT effect.