Preparation And Performance Study Of Highly Efficient Perovskite Solar Cell Based On Doped Tin Oxide Electron Transport Layer

With the continuous development of society and economy,energy shortages and environmental pollution have become the two major difficulties that people around the world need to solve.New energy sources such as wind energy,solar energy and hydrogen energy have attracted more and more attention.Solar energy has become one of the most competitive new energy sources due to its advantages such as clean,pollution-free,wide distribution and sufficient energy.With the continuous development and utilization of solar energy,various solar cells have entered people's lives.As a new generation of solar cells,perovskite solar cells have been rapidly developed in recent years and are considered to be the most promising candidate to replace silicon-based solar cells.The electron transport layer is a key component of perovskite solar cells and plays a decisive role in achieving excellent performance.Commonly used electron transport layer materials,like Ti O₂,have shortcomings such as low electron mobility and high preparation temperature,which greatly limits their development space.With the introduction of SnO₂ materials,it has opened up a new direction for the development of perovskite solar cells.Compared with Ti O₂,although SnO₂has the advantages of a wider band gap and higher electron mobility,it still has some disadvantages.The problem remains to be solved.Therefore,in this paper,the performance of the SnO₂electron transport layer is optimized by doping,and further studies the perovskite solar cell based on SnO₂ electron transport layer.The main contents are as follows:1)For PEIE-doped SnO₂ thin films,the optimal doping concentration is explored through characterization of device performance.The surface morphology,contact angle,light transmittance,surface potential,and electron mobility of the undoped SnO₂ and optimally doped SnO₂:PEIE films were tested.At the same time,the morphology,crystallinity,grain size,light absorption characteristics,and charge transport ability of the perovskite film deposited on the electron transport layer were tested.The test results show that the PEIE doping has greatly improved the interfacial properties of the SnO₂ film layer,the perovskite film deposited thereon,and both.2)The perovskite solar cell device based on the SnO₂:PEIE electron transport layer was successfully prepared.The power conversion efficiency of the optimal device was20.61%,the short-circuit current density(J_sc)was 23.83 m A/cm²,the open-circuit voltage(V_oc)was 1.14V,and the fill factor(FF)was 0.76.Through the characterizations of the device performance,such as IPCE,CV,TPC,TPV,etc.,the perovskite solar cells based on the SnO₂:PEIE electron transport layer are superior to the devices based on the SnO₂electron transport layer,and the stability and reliability of the device performance are also better.3)For Li F-doped SnO₂films,the surface morphology,contact angle,and light transmittance of the undoped SnO₂ and the optimally doped SnO₂:Li F films were tested,as well as the surface morphology,crystal quality,and light absorption characteristics of the perovskite films deposited on them.The results show that the Li F dopingsignificantly improves the quality of the perovskite film and the interface performance,indicating that the interface and film internal defects are effectively passivated4)A high-efficiency perovskite solar cell device based on the SnO₂:Li F electron transport layer was successfully prepared.The power conversion efficiency of the best-performing device was 21.33%,the J_sc was 23.99 m A/cm²,and the V_oc was 1.13 V and the FF is 0.78.Compared with the perovskite solar cell device based on the pristine SnO₂ electron transport layer,the perovskite solar cell device based on the SnO₂:Li F electron transport layer shows better performance,and also has better reliability and stability.