Research On Mode Characteristics Of 1064nm Semiconductor Laser Based On Lateral Microstructure

Wide-ridge waveguide semiconductor lasers are widely used because of their high power characteristics.However,the wide-ridge waveguide will cause the near-field spot "multi-lobe" phenomenon,resulting in poor beam quality and low efficiency.It is an effective technical way to improve the output mode and beam quality of the wide-ridge waveguide semiconductor laser devices by fabricating microstructure on wide-ridge waveguide,and its process is relatively simple.The output mode characteristics of the laser devices are usually improved by adjusting the injected carrier distribution when the microstructures are fabricated on a wide ridge waveguide.In recent years,a few reports have experimentally confirmed that the microstructures can also significantly improve the output mode characteristics of laser devices by adjusting the mode loss of the optical field.However,there are few systematic studies on its working mechanism.This paper mainly focuses on the research of 1064 nm lateral microstructure wide-ridge waveguide semiconductor laser devices,the modulation mechanism of the lateral microstructure on the optical field mode in the laser cavity has been mainly explored,and a new device structure was designed and the device fabrication research was carried out.The specific research contents include:(1)Based on the theoretical analysis,the working principle and characteristics of wide-ridge waveguide semiconductor laser were analyzed.The mode cut-off condition of the device was analyzed by the waveguide theory of semiconductor laser and the equivalent refractive index method.The influence of the device waveguide structure on the laser output characteristics was investigated by simulation,and the epitaxial structure of a1064 nm lateral microstructure wide-ridge waveguide semiconductor laser was designed and optimized.(2)The mechanism of optical field mode regulation of lateral microstructure was studied.Based on the mode threshold gain theory and simulation,the optical field distribution characteristics of each order mode in the resonator of a wide-ridge waveguide semiconductor laser was analyzed,the mechanism of different optical field modes with different losses under the action of lateral microstructure was explored,and the theory of optical field mode regulation of lateral microstructure was elucidated.(3)The fabrication of 1064 nm lateral microstructure wide-ridge waveguide semiconductor laser devices was carried out.According to the regulation mechanism of lateral microstructure on the optical field mode,a 1064 nm lateral microstructure wide-ridge waveguide semiconductor laser device was optimized,and the device fabrication technology research was carried out.Based on the designed epitaxial structure,a 1064 nm semiconductor laser epitaxial material was obtained by epitaxial growth.The fabrication process of the designed laser device structure was studied,and the semiconductor laser device was fabricated by optimizing the key process parameters.(4)The 1064 nm lateral microstructure wide-ridge waveguide semiconductor laser device was tested and analyzed.The test results show that,compared with the "multi-lobe" spot of wide-ridge waveguide semiconductor laser device,the laser device with lateral microstructure presents a "single-lobe" spot,which indicates that the output mode characteristics of the proposed device are improved.Due to the improvement of output mode characteristics,the output power,slope efficiency and electro-optic conversion efficiency are increased by 58.5%,80% and 55.9%,respectively,by the introduction of lateral microstructure.