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The Research Of Signal Acquisition System For Neutron Single Event Effects At Back-n

Posted on:2022-01-11Degree:MasterType:Thesis
Country:ChinaCandidate:C L LiuFull Text:PDF
GTID:2480306323966169Subject:Physical Electronics
Abstract/Summary:PDF Full Text Request
With the improvement of chip integration,the size,operating frequency,and operating voltage of the chip also decrease,so the critical charge for the neutron single event effect is also gradually reduced.The probability of the neutron single event effect is greatly increased,which will pose a serious threat to the security of the electronic equipment in our country's aviation,high-speed rail,and large-scale computer clusters.Therefore,the study of neutron-induced single event effect is of great significance for our country's future development of aircraft,high-speed rail,and other key electronic equipment and their stable and reliable operation.Since the neutron energy spectrum of the spallation neutron source is the white light neutron source,which is very close to the neutron energy spectrum of the earth's atmosphere.So,there are great advantages to carry out the neutron-induced single event effect,based on the spallation neutron source.However,the current international spallation neutron sources have short neutron beam lines and poor neutron single energy.So it is mainly used to analyze the cross section of the single event effect of the chip device.For the analysis of the neutron energy dependence single-event effect cross-section,the quasi-single-energy neutron source is usually chosen.With the establishment of the 80 m Back-n beamline of China Spallation Neutron Source(CSNS),both the neutron single event effect cross-section and the neutron energy dependence can be measured on the spallation neutron source.In this thesis,by using the characteristics of the Back-n neutron source,the signal acquisition system of the neutron-irradiated single event effect based on the Back-n experimental device has been carried out.Through the investigation of the research status of single event effects at home and abroad,the following technical route was selected.The analog signal detection method was chosed to detect the single event effects of digital and analog chips and the analysis of single-event effect cross-section differential energy spectrum was completed by the neutron time-of-flight method.Based on the PXIe platform,the single event signal acquisition system was designed and implemented,including the Current Sense Module(CSM),Signal conditioning and Acquisition Module(SAM),and Data Processing and Measurement Module(DPM).Besides the data readout software based on the PXIe chassis controller,and the DAQ software were developed.A test platform was built in the laboratory,to complete the test of functional verification and key performance indicators of each module of the single event signal acquisition system.And by simulating the actual test environment,the software and hardware of the single event signal acquisition system were jointly tested.The overall function of the system is verified.Finally,using the Vertical Double-diffused Metal Oxide Semiconductor field-effect transistor(VDMOS)provided by the IMECAS,the single event signal acquisition system was jointly tested at the Back-n experimental device,and successfully realized the VDMOS single event effect waveform acquisition and obtained the single-event effect cross-section differential energy spectrum.
Keywords/Search Tags:Single event effect, Back-n, Neutron time of flight, VDMOS, PXIe
PDF Full Text Request
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