Preparation Of GaAs Optical Resonance Nanopillar Array Based On Small-size SiO₂ Nanospheres

The optical resonance effect of semiconductor nanomaterials can effectively improve the photoelectric conversion efficiency and performance of optoelectronic devices.FDTD optical simulation shows that Ga As nanowire arrays have multipole resonance absorption behaviors such as dipoles and quadrupoles,and dipole resonance has a more obvious absorption effect,and its size requirements for Ga As nanowire arrays are more For harsh.At present,it is difficult to achieve the preparation of small size(D<300nm)nanostructures at a lower cost.it is also more difficult to prepare a 150nm?200 nm Ga As array structure based on excited dipole optical resonance with higher photoelectric conversion efficiency.Therefore,based on the characteristics of cationic surfactants that are easy to adsorb anions,the cations are generated by CTAB hydrolysis,thereby suppressing the nucleation of nanospheres.The modified St?ber method is used to prepare small-sized Si O₂nanospheres,which is then used as a mask.The nanowire array was obtained by RIE—ICP etching.For the preparation of small-sized nanostructures,the size and uniformity of the nanospheres were improved by adding a cationic surfactant CTAB during the synthesis process,and the settings for the amount Controlled experiments of different reactants(TEOS),p H,reaction time,and CTAB concentration.The experiment found that when the TEOS is 4.5ml+8ml(two-step method),the ammonia concentration is 9%,the reaction time is 3 hours,and the CTAB concentration is about 0.1m M/L,the nanosphere particle size can reach 230nm?280nm,the uniformity is good,and it can be a better barrier layer.Secondly,the Ga As surface mask layer was prepared by the gas-liquid interface method and the LB film pulling technology.Through comparison,it was found that the LB film pulling technology can control the film pulling speed so that the formed mask layer can be well dispersed into a single layer film.In addition,the mask layer is used as a barrier layer,and Ga As is etched by RIE-ICP method.Through comparison experiments of setting different bias power,etching time,and etching pressure,a good surface morphology Ga As nanoarray is prepared,and preliminary grasped the relationship between bias power and etching time.Finally,the micro-region optical reflection test was used to verify its optical resonance characteristics.Compared with the FDTD optical simulation results,it was found that the position of the absorption peak was consistent with the simulation results,which verified the excitation of its dipole optical resonance effect.Lay a solid foundation for the application of optical resonance nanostructures in the field of high-quality photocathode.