Font Size: a A A

Radio frequency interfernce (RFI) modeling of complex modules in mobile devices and system-level modeling for transient ESD simulation

Posted on:2015-09-22Degree:Ph.DType:Thesis
University:Missouri University of Science and TechnologyCandidate:Li, TianqiFull Text:PDF
GTID:2478390017993688Subject:Electrical engineering
Abstract/Summary:
The thesis is composed of three papers, which cover the systematic modeling of radio-frequency-interference (RFI) and electro-static-dischage (ESD) problems happened in mobile devices.;In the first paper, an averaging technique is developed, for phase resolved scanning over random fields generated by multiple uncorrelated stochastic sources. This method can separate the field contribution of each noise source and resulting field patterns as if the out-of-interest sources were turned off. The scanned data can be used for emission source localization, far-field pattern calculation and Huygens's box modeling.;In the second paper, using Huygens's Equivalent Theorem a systematic approach for the modeling of radio frequency interference is introduced. The methodology can be implemented using commercial tools and thereby does not require any additional data handling algorithm, e.g. extracting dipole moments from the scanned data. The influence of multiple-scatting effects is considered. The challenges of modeling a complex electronic system are summarized and solutions are provided.;In the third paper, an improved electrostatic discharge (ESD) system-level transient simulation modeling method and discusses its validation using IEC 61000-4-2 ESD pulses on a real-world product. The system model is composed of high current and broadband (up to 3GHz) models of R, L, C, ferrite beads, diodes, and integrated circuit IO pins. A complex return path model is the key to correctly modeling the system's response to the IEC excitation. The model includes energy-limited, time-dependent IC damage models. A power-time integral method is introduced to accurately determine if a junction would experience thermal runaway under an arbitrary injection waveform.
Keywords/Search Tags:Modeling, ESD, Complex
Related items