Font Size: a A A

Compensation of extreme ultraviolet lithography image field edge effects through optical proximity correction

Posted on:2015-08-14Degree:M.SType:Thesis
University:Rochester Institute of TechnologyCandidate:Maloney, ChrisFull Text:PDF
GTID:2478390017497229Subject:Engineering
Abstract/Summary:
For EUVL to be enabled for HVM, the printing of densely spaced die must be allowed. To achieve this requirement, a mitigation strategy to compensate for field edge effects is vital. This study has two goals. First, we will show that field edge effects can be modeled for reticles with an absorber border and for those with an etched ML border. The second is to investigate the limitations that exist when compensating for field edge effects with OPC, including image quality, REMA blade stability and OoB variability. This thesis shows that for different reticles different mitigation strategies are required in order to enable EUV HVM.
Keywords/Search Tags:Field edge effects
Related items