| The etch procedure used in this investigation was SF;I-V evaluation of Schottky barrier diodes did not show significant changes in etched vs. unetched samples.;The etched samples showed a measurable change in the transient capacitance measurements used for the DLTS method, but the results were not interpretable as a single energy trap level.;Preliminary XPS and Auger measurements detected fluorine in large quantities in the wafer even after surface sputter. Fluorine has been known to cause carrier reduction under ion implantation in semiconductors and may be the reason for the C-V results. (Abstract shortened with permission of author.).;The C-V measurements pointed to a significant dopant compensation beneath the surface of the wafer. |
