Study of disorder and strain in semiconductor heterostructures and superlattices by Raman scattering

Raman scattering was employed in this thesis to study the substitutional disorder and strain in semiconductor heterostructures and superlattices. The details of the In;The stress, calculated from the pressure coefficient and the observed frequency shift for GaP-like LO phonon in In;The strain induced shifts of the GaP-like LO phonons indicate the misfit strains which are known to exist in the (GaP)...