Heterogeneous integration and the exploitation of strain in MBE growth: Engineered substrates

New device technologies and substrate manufacturing techniques have led the compound semiconductor research to a new area over the past thirty years. However, with few substrates available, the composition of epitaxial layer is restricted to the lattice constant of substrates. This constraint strongly limits the device applications of compound semiconductors.; To overcome this limit, heterogeneous integration has been actively pursed. In this thesis, a few approaches are addressed. A metamorphic heteroepitaxial growth is used as a baseline. The idea of compliant substrates is introduced to address applications for multi-wavelength emission lasers. The first application of In_0.53Ga_0.47As bonded substrates for In_0.53 Ga_0.47As/Al_0.48In_0.52As HEMT regrowth is introduced to prove the feasibility of this oxide-bonded substrate. An additional approach for taking advantage of lattice-mismatched material is to exploit the Stranski-Krastanow growth mode to obtain quantum dots. Here, the relationship between the strain and surface exchange on quantum dot structure is analyzed to understand the strain-related mechanism.