Characterization and modeling of short channel polysilicon thin film transistors

The goal of this thesis is to develop a semi-empirical analytical model for the AC and DC characteristics of both n and p channel polysilicon TFTs which is suitable for implementation in a SPICE circuit simulator. Our semi-empirical approach results in a physically based model with parameters which are easily related to the device structure and fabrication process. Because it is physically based, a minimum number of parameters is required. Furthermore, extension of the model to include other non-ideal effects is much more straightforward.;The intrinsic DC model includes all four regimes of operation: leakage, subthreshold, above threshold, and kink; and the effects of temperature and channel length have been described.;The AC characteristics of the device are taken into account through the gate capacitance which accurately reproduces the frequency dispersion phenomenon. The new elements of the model are gate voltage dependent access resistors in series with the gate-to-source and gate-to-drain capacitances. While the model maintains an intuitively satisfying transmission line formalism, no additional sub-transistors are introduced into the circuit which would result in much longer simulation times.;An extensive investigation has also been performed using the SEMICAD...