| The InP/InGaAs material system has several beneficial properties that make it more advantageous for HBT applications. Because the metalorganic molecular beam epitaxy (MOMBE) growth technique is uniquely capable of growing high-quality materials for the fabrication of C-doped base InP/InGaAs HBTs, it was employed for the research work presented in this thesis.;Results from experiments to optimize the MOMBE growth parameters for the growth of high quality InP and InGaAs material will first be presented. Next, the effect of a simplified switching scheme on interface abruptness will be discussed. By optimizing the anneal and vent time for both the As-to-P and P-to-As transitions, near monolayer control will be demonstrated. The use of SiBr;Using the optimized growth conditions for layer growth as well as for interfaces, C-doped base InP/InGaAs HBT structures have been grown and characterized. For standard HBT devices employing InGaAs contacting layers, excellent device results were obtained. High frequency measurements of these devices yielded 86 GHz for f... |
