| In this study, a single InAs/GaAs quantum dot structure model is developed using Nextnano software and two quantum dot infrared photodetectors are assessed. The two devices are based on the intraband photoexcitation between bound-to-bound or bound-tocontinuum in the conduction band and valence band respectively. Two samples of InAs quantum dots embedded in GaAs are grown and fabricated. One of which is n-type doped, and the other is p-type doped. AFM is used to measure the physical characteristics of the quantum dots, and Photoluminescence (PL) and Fourier Transform Infrared Spectroscopy (FTIR) are performed to measure optical characteristics of the samples. An InAs/GaAs quantum dot is simulated using the k·p 8x8 approximation scheme to calculate its band gap, energy eigenvalues and transition rates. Simulated interband transition energies compare favorably to the PL of quantum dot structure. Simulated bound-to-continuum transition energies also compare favorably to the FTIR response observed for n-type device. |
