| The insulated gate bipolar transistor (IGBT) has been a well-known power electronic switch device. Especially, the great development of the IGBT characteristics in the recent years has made IGBT a dominating semiconductor device in the middle power application field. As a result of its growing application, accurate and fast simulation IGBT models are needed for the electrical engineers to analyze device performance and predict circuit behavior.; The research focuses on the characterization and development of physics-based Spice model for IGBTs, with emphasis on the 4th generation IGBT, the trench-gate-punch-through IGBT. In this thesis, the IGBT characterization procedures and IGBT modeling approaches are given a complete summary review. The implementation procedure of the IGBT Spice model suitable for various kinds of IGBTs simulation is introduced. Complete Fourier-based-solution modeling approach system, including the development, practical parameter extraction procedure, and extensive experimental validation of the model, is presented. |
