| Characterization and modeling of thermal behavior assumes a lot of significance in present day semiconductor technologies like that of Dielectrically Insulated Bipolar Junction Transistors (DIBJT's). Device heating is an important issue because of which the device performance degrades. This report presents the development of compact models for DIBJT's, their analysis in detail, experimental verification of models by comparisons with measurement and numerical simulations. In addition to analytical modeling, temperature dependent large signal models have been developed and heating effect illustrated for single emitter BJT's. A simple structure of a DIBJT is taken and each part is modeled with certain assumptions, and their validity is proved through results that are consistent with measured data of actual transistors. |
